Perspectives on Nanotechnology for RF and Terahertz Electronics

Cha, SeungNam; Choi, Jung Han; Baik, Chan Wook; Sohn, Hyung Bin; Choi, June-Whan; Kim, Ohyun; Kim, Jong Min

doi:10.1109/tmtt.2011.2163728

Cited by 12 publications

(3 citation statements)

References 24 publications

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“…It is confirmed from Fig. 4(b) that high linearity is secured for most of operating voltage (V GS ) near and above V GS = 1.0 V. Considering the simulated RF performances, remote gas sensing, electronic components for THz-spectroscopy, and high-speed integrated optoelectronic systems would be the applications of the Ge/GaAs heterojunction TFETs [25]- [27].…”

Section: Resultsmentioning

confidence: 60%

Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications

Cho

Kim

Jhon

et al. 2013

IEEE J. Electron Devices Soc.

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In this paper, a nanowire germanium/gallium arsenide (Ge/GaAs) heterojunction-based tunneling field-effect transistor (TFET) is investigated, with an emphasis on the device-circuit interaction. It is applied to a common-source (CS) amplifier, one of the most fundamental analog circuit blocks, and its performance is evaluated with a device-circuit mixed-mode simulation. Furthermore, the passive elements are adjusted to obtain the proper operating point (Q-point) of the circuit, and high-frequency operations are evaluated on this basis. Moreover, from the simulation results, the transfer function is successfully modeled and verified, which shows that the CS amplifier with the heterojunction TFET works as a single-zero and two-pole system. The 3-dB roll-off and unity-gain frequencies are 320 GHz and 2 THz, respectively, which is evidence for circuit applications in the extremely high-frequency regime.

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Section: Resultsmentioning

confidence: 60%

Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications

Cho

Kim

Jhon

et al. 2013

IEEE J. Electron Devices Soc.

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“…In the future nanotechnology could facilitate this by providing the tools for minimising the dimensions of all the components of THz imaging set-ups. Generally, there are many perspectives on nanotechnology concerning terahertz electronics and many novel electronic components are expected to be developed 91 .…”

Section: Nanotechnology For Thz Imagingmentioning

confidence: 99%

Nanotechnology-supported THz medical imaging

Stylianou

Talias

2013

F1000Res

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Over the last few decades, the achievements and progress in the field of medical imaging have dramatically enhanced the early detection and treatment of many pathological conditions. The development of new imaging modalities, especially non-ionising ones, which will improve prognosis, is of crucial importance. A number of novel imaging modalities have been developed but they are still in the initial stages of development and serious drawbacks obstruct them from offering their benefits to the medical field. In the 21 st century, it is believed that nanotechnology will highly influence our everyday life and dramatically change the world of medicine, including medical imaging. Here we discuss how nanotechnology, which is still in its infancy, can improve Terahertz (THz) imaging, an emerging imaging modality, and how it may find its way into real clinical applications. THz imaging is characterised by the use of non-ionising radiation and although it has the potential to be used in many biomedical fields, it remains in the field of basic research. An extensive review of the recent available literature shows how the current state of this emerging imaging modality can be transformed by nanotechnology. Innovative scientific concepts that use nanotechnology-based techniques to overcome some of the limitations of the use of THz imaging are discussed. We review a number of drawbacks, such as a low contrast mechanism, poor source performance and bulky THz systems, which characterise present THz medical imaging and suggest how they can be overcome through nanotechnology. Better resolution and higher detection sensitivity can also be achieved using nanotechnology techniques.

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“…G RAPHENE has recently attracted great attention in the field of nanotechnology aimed at RF-and microwave electronics [1], [2]. This was made possible by the first isolation of graphene, a one-atom layer sheet of carbon atoms organized in a honeycomb lattice, together with the demonstration of the field-effect, in 2004 [3].…”

Section: Introductionmentioning

confidence: 99%

Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment

Andersson

Habibpour

Vukušić

et al. 2012

IEEE Trans. Microwave Theory Techn.

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We report on the first complete RF characterization of graphene FET subharmonic resistive mixers in the frequency interval fRF = 2-5 GHz. The analysis includes conversion loss, noise figure and intermodulation distortion. Due to an 8 nm thin Al2O3 gate dielectric the devices operate at only ∼0 dBm of local oscillator power, with an optimum measured conversion loss in the range 20-22 dB. The noise figure closely mimics the conversion loss, thus determining the noise to be essentially thermal in origin, which is promising for cryogenic applications. The highest input third order intercept point is measured to be 4.9 dBm at a local oscillator power of 2 dBm.

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Perspectives on Nanotechnology for RF and Terahertz Electronics

Cited by 12 publications

References 24 publications

Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications

Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications

Nanotechnology-supported THz medical imaging

Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment

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