1999
DOI: 10.1007/978-1-4612-1464-9
|View full text |Cite
|
Sign up to set email alerts
|

Perspectives of Information Systems

Abstract: Library of Congress Cataloging-in-Publication Data Savolainen, Vesa. Perspectives of Information Systems I Vesa Savolainen p. cm. Includes bibliographical references (p.).

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

1
3
0

Year Published

2004
2004
2013
2013

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(4 citation statements)
references
References 0 publications
1
3
0
Order By: Relevance
“…For optimized 1300 nm InGaAsP QW structures, threshold current densities of approximately 1650-1700 A cm −2 were achieved for devices with the cavity length of 500 µm at the operation temperature of 80 • C, as reported by Belenky et al [36]. The threshold current density of the 1300 nm diode lasers based on the InGaAlAs QW on InP, with the cavity length of 1000 µm, has been reported as approximately 1350 A cm −2 at the temperature of 80 • C [37]. The InGaAsN QW lasers require only a single QW active region for high temperature operation, owing to the larger material gain parameter and better electron confinement in the QW.…”
Section: Lasing Characteristics Of Ingaasn Qw Laserssupporting
confidence: 54%
See 2 more Smart Citations
“…For optimized 1300 nm InGaAsP QW structures, threshold current densities of approximately 1650-1700 A cm −2 were achieved for devices with the cavity length of 500 µm at the operation temperature of 80 • C, as reported by Belenky et al [36]. The threshold current density of the 1300 nm diode lasers based on the InGaAlAs QW on InP, with the cavity length of 1000 µm, has been reported as approximately 1350 A cm −2 at the temperature of 80 • C [37]. The InGaAsN QW lasers require only a single QW active region for high temperature operation, owing to the larger material gain parameter and better electron confinement in the QW.…”
Section: Lasing Characteristics Of Ingaasn Qw Laserssupporting
confidence: 54%
“…To compare the lasing performance of the 1300 nm InGaAsN QW lasers with those of the conventional InP technology, we list the published results that represent some of the best performing 1300 nm diode lasers based on conventional InP technology (InGaAsP QW [36] and InGaAlAs QW [37]), as shown in figure 11. Due to the low material gain parameter, carrier leakage, and Auger recombination, typically 1300 nm InGaAsP-InP QW lasers require multiple QWs, ranging from 9 to 14 QWs [36].…”
Section: Lasing Characteristics Of Ingaasn Qw Lasersmentioning
confidence: 99%
See 1 more Smart Citation
“…Some patients have benefited from treatment with azathioprine or methotrexate [92,93]. Chlorambucil has also shown some efficacy against JIA-associated renal amyloidosis, as compared with historical controls [94]. However, the associated risk of myelotoxicity, leukaemia and sterility prompts the continued search for alternative therapies.…”
Section: Aa Amyloidosismentioning
confidence: 98%