1985
DOI: 10.1103/physrevb.32.8469
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Persistent photoconductivity in doping-modulated multilayers and compensated thin films of hydrogenated amorphous silicon

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Cited by 59 publications
(20 citation statements)
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“…This is also in agreement with Ben- Furthermore, our short exposures results are in agreement with other authors [6,7] and our long exposures results are in agreement with Matsumoto et al [11] who also found that for long exposures dangling bond density (ESR) increases and PL decreases. A similar effect on DC for short as well as long exposures is observed in doping modulated and compensated a-Si:H [38,39].…”
Section: Discussionsupporting
confidence: 54%
“…This is also in agreement with Ben- Furthermore, our short exposures results are in agreement with other authors [6,7] and our long exposures results are in agreement with Matsumoto et al [11] who also found that for long exposures dangling bond density (ESR) increases and PL decreases. A similar effect on DC for short as well as long exposures is observed in doping modulated and compensated a-Si:H [38,39].…”
Section: Discussionsupporting
confidence: 54%
“…1 and 2) is known in the literature as the inverse Staebler-Wronski effect [3] that is similar to the persistent photoconductivity (PPC) observed in doping modulated multi-layered [4] and compensated [5] a-Si:H thin films. This manifests itself as an increase in the dark current and photocurrent after LS, which persists for several hours, even at 300 K. Aker and Fritzsche [3] observed a similar increase in dark current for their boron doped a-Si:H samples, upon light soaking.…”
Section: Discussionmentioning
confidence: 90%
“…This is unlike nc-Si, where surface plays the predominant role. However, boron doped a-Si:H [a-Si:H(B)] samples show an inverse Staebler-Wronski effect [3] that is similar to the persistent photoconductivity (PPC) observed in multi-layered [4] and compensated [5] a-Si:H thin films and has been attributed [3] to the oxide layer at the surface. Further, it appears from the study of surface photo-voltage measurements [6] that even in undoped a-Si:H, SWE involves changes in the surface as well as the bulk.…”
Section: Introductionmentioning
confidence: 92%
“…A metastable excess conductance, which can be enhanced by a brief light exposure up to several orders of magnitude compared to the initial dark conductivity, has been observed in compensated aSi:H films [34][35][36][37][38][39] as well as in doping modulated multilayers of aSi:H [35,38,[40][41][42][43]. This metastable excess conductance, called persistent ph (PPC), decays slowly over several days at room temperature and disappears by annealing near 100°C in multilayered films and 200°C in compensated films [24].…”
Section: Resultsmentioning
confidence: 97%