Perpendicularly magnetized epitaxial Co/Ni multilayers grown on Ru(0001) layers by alternate monoatomic layer deposition

Ito, K.; Kikuchi, Naoto; Seki, Takeshi; Takanashi, Kōki

doi:10.1016/j.jmmm.2022.169908

Cited by 3 publications

(2 citation statements)

References 29 publications

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“…Moreover, the maximum center stress increased with mesa size. In the (110) crystal plane of the patterned 200 μm mesa Si substrate, Figure 20c demonstrated the E 2 peak shift of GaN at different groove heights (5, 10, 15 μm) suggesting that maintaining the trench height above the GaN thickness (12 μm) significantly reduced residual stress, while the groove width minimally impacted it (Figure 20d). However, the study faced statistical limitations due to the randomness in crack generation.…”

Section: Patterningmentioning

confidence: 99%

“…[ 103–105 ] In response, there are ongoing efforts to optimize and develop innovative thin‐film epitaxy processes aimed at minimizing the residual stress induced by these factors. Techniques under exploration include migration‐enhanced metal‐organic chemical vapor deposition, [ 106,107 ] growth mode alternating multilayer technology, [ 108–110 ] selective chemical vapor deposition, [ 111,112 ] and molecular beam epitaxy. [ 113,114 ] To facilitate the production of high‐quality epitaxial films with minimal residual stress, accurately characterizing these films’ residual stress and understanding stress evolution during growth are crucial.…”

Section: Application Of Raman Characterization and Modeling In Microe...mentioning

confidence: 99%

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Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Yang,

Wang,

Chen

et al. 2024

Laser & Photonics Reviews

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In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro‐scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman‐stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro‐scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman‐stress detection technology.

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Section: Patterningmentioning

confidence: 99%

Section: Application Of Raman Characterization and Modeling In Microe...mentioning

confidence: 99%

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Yang,

Wang,

Chen

et al. 2024

Laser & Photonics Reviews

View full text Add to dashboard Cite

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Engineering perpendicular magnetic properties of Pt/Co2MnSi multilayered structures capped with dielectric Ta2O5

Wang

Nie

Wang

et al. 2023

Surfaces and Interfaces

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Wave Propagation and Magnetic Ordering in Ferromagnetic Materials

Khater¹,

Ren²

2023

Fractals

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The soliton wave solutions to the (2+1)-dimensional Heisenberg ferromagnetic spin chain [Formula: see text] problem are explored in this paper. The (2+1)-dimensional [Formula: see text] equation describes the nonlinear spin dynamics of Heisenberg ferromagnetic spin chains in the semiclassical limit. This formula is based on the spin-chain of the Heisenberg field. The bilinear and anisotropic interactions are accounted for in this equation. Even ferromagnetism may be explained by this paradigm, since it describes the propagation of waves inside a substance (the magnetic ordering in ferromagnetic materials). To construct a new soliton wave solution and validate its correctness, modern analytical and approximative schemes are utilized such as the Khater II and Adomian decomposition methods. Numerous interpretations for solitary waves are shown by various plots such as polar plots, contour plots, two-dimensional plots, and three-dimensional plots. The study’s novelty may be appreciated by contrasting our findings with those presented in previously published research publications. Most of the many computational simulations used are performed with the aid of a program called Mathematica 13.1.

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Perpendicularly magnetized epitaxial Co/Ni multilayers grown on Ru(0001) layers by alternate monoatomic layer deposition

Cited by 3 publications

References 29 publications

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Engineering perpendicular magnetic properties of Pt/Co2MnSi multilayered structures capped with dielectric Ta2O5

Wave Propagation and Magnetic Ordering in Ferromagnetic Materials

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