Perpendicular magnetic anisotropy in bulk and thin-film CuMnAs for antiferromagnetic memory applications

Abstract

CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the surface magnetization. It is predicted, based on first-principles calculations, that easy-axis anisotropy can be achieved in bulk CuMnAs by substituting a few percent of As atoms by Ge, Si, Al, or B. This effect is attributed to the changing occupation of certain electronic bands near the Fermi level induced by the hole doping. The calculated temperature dependence of the magnetic anisotropy does not exhibit any anomalies. Thin CuMnAs(001) films are also predicted to have perpendicular magnetic anisotropy.

A strategic high throughput search for identifying stable Li based half Heusler alloys for spintronics applications

“…in spin transfer torque (STT) based magnetic random access memory (MRAM) [51,52] etc [53]. Thus, as a representative case, the LiFeS alloy is analyzed and presented.…”

High-resolution diffraction reveals magnetoelastic coupling and coherent phase separation in tetragonal CuMnAs

“…Previous studies typically use a Hubbard correction within the DFT+U method 42,43 to investigate tetragonal CuMnAs, using an on-site coulomb term U and site exchange term J. Here a simplified approach is used with an effective on-site coulomb interaction U eff = U − J for which values of 1.7 eV, 44 1.92 eV, 45 3.0 eV, 46 and 4.1 eV 4 were reported. Here we wish to examine how the magnetic ordering and moment magnitude affects the lattice, and whether there is any tendency for local moments on Cu atoms, for different values of U eff .…”