Perpendicular Magnetic Anisotropy and Hydrogenation-Induced Magnetic Change of Ta/Pd/CoFeMnSi/MgO/Pd Multilayers

Abstract

The perpendicular magnetic anisotropy (PMA) has been achieved in Ta/Pd/CoFeMnSi (CFMS)/MgO/Pd film, in which the Heusler compound CoFeMnSi is one of the most promising candidates for spin gapless semiconductor (SGS). The strong PMA, with the effective anisotropy constant Keff of 5.6 × 105 erg/cm3 (5.6 × 104 J/m3), can be observed in the Ta/Pd/CFMS (2.3 nm)/MgO (1.3 nm)/Pd films annealed at 300 °C. In addition, it was found that the magnetic properties of Ta/Pd/CFMS/MgO/Pd films are sensitive to hydrogen (H2) under a weak magnetic field (< 30 Oe), whose residual magnetization (Mr) decreased from 123.15 to 30.75 emu/cm3 in the atmosphere with H2 concentration of 5%.

Effects of Interfacial Termination, Oxidation, and Film Thickness on the Magnetic Anisotropy in Mn2.25Co0.75Ga0.5Sn0.5/MgO Heterostructures

“…Recently, strong PMA has been achieved in Ta/Pd/CoFeMnSi/MgO/Pd multilayers experimentally by You et al , where the Heusler alloy CoFeMnSi is one of the most promising SGS candidates. However, strong SOC (Pd layer) plays an important role in the realization of PMA in Ta/Pd/CoFeMnSi/MgO/Pd multilayers. , So far, there are few reports on the PMA of ferromagnet/oxide heterostructures based on the SGSs with weak SOC. It is necessary to carry out related studies to enrich the development of SGS materials and provide theoretical support for designing SGS-based spintronic devices.…”

Theoretical scheme of nonvolatile strain-switchable high/low resistance based on novel strain-tunable magnetic anisotropy in the Mn2.25Co0.75Ga0.5Sn0.5/MgO superlattice

“…7,8 Until now, lots of ferromagnet/oxide interface structures with magnetic anisotropy have been investigated using theory and experiments, particularly for the MgO-based interface structures. [9][10][11][12][13] For example, Ikeda et al found that the interfacial PMA between CoFeB and MgO films reaches up to 1.3 mJ m À2 . 11 The tunneling magnetoresistance (TMR) effect is another important characteristic of MRAM devices.…”

Robust and Efficient Electrical Injection of Spin-Polarized Carriers from a Zero-Spin-Gap Half-Metal V2NiAl into n-Si at Room Temperature

“…However, the remarkable characteristics of spin gapless semiconductors have to be realized in thin films for spintronics applications . So far, there are only a few Heusler alloys grown in thin-film form with SGS characteristics, which have been reported, e.g., Mn 2 CoAl, CoFeCrAl, Ti 2 MnAl, and CoFeMnSi. − Here, we have addressed the growth of the high-quality thin film of yet another alloy, V 2 NiAl, possessing SGS behavior, followed by its detailed structural, magnetic, and transport properties. Due to the unique band structure, devices based on zero-spin-gap half-metal having SGS characteristics with full spin polarization could result in innovative physical properties, unique phenomena, and latest ultramodern technological applications, such as new generation or upgraded spintronic device applications.…”