Perpendicular Magnetic Anisotropic 
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 Epitaxial Films with Tunable Coercivity

Xi, Zhongnan; Li, Yao; Hou, Pengxiang; Jiao, Peijie; Ding, Honghe; Hu, Fengchun; Hu, Jun; Yang, Yurong; Wu, Di

doi:10.1103/physrevapplied.18.014008

Cited by 7 publications

(6 citation statements)

References 67 publications

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“…Our observations reveal that the conductivity of thin NCO films is highly sensitive to synthesis parameters, explaining the disparities in reported thin-film conductivity across various studies. 13,14 Contrary to previous reports, our 10 nm (100)oriented NCO film exhibits a higher longitudinal conductivity and Hall conductivity.…”

Section: 4contrasting

confidence: 76%

“…High-quality epitaxial NCO films have been successfully fabricated using pulsed laser deposition (PLD) and magnetron sputtering on (001)-oriented MgAl 2 O 4 (MAO) single-crystal substrates. [8][9][10][11][12][13][14] Notably, the deposition temperature (T s ) remains below 400°C, compatible with standard CMOS processing techniques. The epitaxial NCO films possess strain-induced PMA with a K u value of approximately 0.2MJ/m 3 at room temperature.…”

Section: 9mentioning

confidence: 99%

“…7,10 Recent reports highlight the achievement of a magnetoresistance of nearly 230% at low temperatures in an epitaxial MTJ structure composed of NCO/MAO/NCO, corresponding to a spin polarization as high as -73%. 9 Additionally, the electrical and magnetic properties of NCO films can be finely tuned by adjusting synthesis parameters 13,14 and protonation, 10,15,16 providing further opportunities for optimizing their performance in spintronics applications.…”

Section: 9mentioning

confidence: 99%

“…24,25 Herein, we utilized the weak-localization function: ρ(T) = ρ 0 + aT 3/4 + bT n to fit the resistivity below T min , where ρ 0 , a, b are fitting parameters. 13,24,25 Notably, ρ 0 corresponds to the residual resistivity that remains unaffected by temperature variations and is associated with defects and impurities. The second term characterizes the elastic electron-electron scattering, while the third term encapsulates all inelastic scattering processes, encompassing electron-phonon, electron-magnon, and electron-electron interactions.…”

Section: Magnetic Anisotropy and Longitudinal Transport Of Nco Filmsmentioning

confidence: 99%

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Orientation-dependent magnetic properties and anomalous Hall effect in half-metallic NiCo2O4 thin films

Xu,

Bai,

et al. 2024

Preprint

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The proliferation of spintronic devices necessitates the advancement of novel material platforms, particularly those featuring ferrimagnetic and antiferromagnetic properties. Among them, NiCo2O4 (NCO), a ferrimagnetic material, stands out for its half-metallic band structure and remarkable attributes like robust perpendicular magnetic anisotropy, a high Curie temperature, and tunable film characteristics through conductivity modulation. These unique features render NCO a prime candidate for spintronics applications. Here, we focus on the orientation-dependent magnetic properties and transport behavior of epitaxial NCO films grown on (001)-, (110)-, and (111)-oriented MgAl2O4 substrates. Notably, NCO films with different epitaxial orientations exhibit significant differences in magnetic anisotropy and transport behavior. Specifically, the (110)-oriented NCO samples present a field-driven spin reorientation transition in the out-of-plane direction, resulting in a split hysteresis loop and corresponding longitudinal magnetoresistance and anomalous Hall curves. Importantly, the anomalous Hall effect (AHE) of (100) and (111)-oriented NCO films displays an opposite sign, while the AHE of (110)-oriented NCO films exhibits an unusual sign reversal at approximately 150 K, distinguishing them from other magnetic oxides. With these findings, NCO films offer a novel platform for fundamental AHE research, featuring tunable AHE signs and intriguing physical mechanisms. Additionally, by introducing an antiferromagnetic NiO layer, we achieve a significant exchange-bias effect and enhanced coercive field, holding immense potential for future spintronics applications, such as ferrimagnetic high-density memories.

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Section: 4contrasting

confidence: 76%

Section: 9mentioning

confidence: 99%

Section: 9mentioning

confidence: 99%

Section: Magnetic Anisotropy and Longitudinal Transport Of Nco Filmsmentioning

confidence: 99%

See 2 more Smart Citations

Orientation-dependent magnetic properties and anomalous Hall effect in half-metallic NiCo2O4 thin films

Xu,

Bai,

et al. 2024

Preprint

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“…For 5, 10, and 32 nm films, the coercive field H c is about 30, 120, and 250 Oe, respectively. It is well-known that the electrical behavior and magnetic properties in epitaxial NCO films are very sensitive to growth conditions, such as temperature, oxygen pressure, deposition rate, and strain caused by the substrate. ,− For epitaxial thin films, film thickness is a powerful control knob for property tuning …”

Section: Resultsmentioning

confidence: 99%

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

Du,

Wang,

Tang

et al. 2024

ACS Appl. Mater. Interfaces

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Control of magnetic anisotropy in thin films with perpendicular magnetic anisotropy is of paramount importance for the development of spintronics with ultralow-energy consumption and high density. Traditional magnetoelectric heterostructures utilized the synergistic effect of piezoelectricity and magnetostriction to realize the electric field control of magnetic anisotropy, resulting in additional fabrication and modulation processes and a complicated device architecture. Here, we have systematically investigated the electric current tuning of the magnetic properties of the metallic NiCo 2 O 4 film with intrinsic perpendicular magnetic anisotropy. Ferrimagneticto-paramagnetic phase transition has been induced through Joule heating, resulting in a rapid decrease of both magnetic coercivity and moment. An ultralow current density of 2.5 × 10 4 A/cm 2 , which is 2 to 3 orders magnitude lower than that of conventional spin transfer torque devices, has been verified to be effective for the control of the magnetic anisotropy of NiCo 2 O 4 . Successful triggering of magnetic switching has been realized through the application of a current pulse. These findings provide new perspectives toward the electric control of magnetic anisotropy and design of spintronics with an ultralow driving current density.

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Manipulate the magnetic and electronic states in NiCo2O4 films through protonation

Wang

et al. 2023

Journal of Magnetism and Magnetic Materials

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Perpendicular Magnetic Anisotropic NiCo2O4 Epitaxial Films with Tunable Coercivity

Cited by 7 publications

References 67 publications

Orientation-dependent magnetic properties and anomalous Hall effect in half-metallic NiCo2O4 thin films

Orientation-dependent magnetic properties and anomalous Hall effect in half-metallic NiCo2O4 thin films

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

Manipulate the magnetic and electronic states in NiCo2O4 films through protonation

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