Perpendicular exchange bias in IrMn/Pt/[Co/Pt]3 multilayers with cone magnetization

Castro, G. M. B.; Nagamine, L.C.C.M.; Geshev, J.; Saitovich, E. B.; Schmidt, João Edgar

doi:10.1016/j.tsf.2011.04.223

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…[157][158][159][160] The cone state is experimentally observed in thin films of Co deposited on Pt or Pd, 161 Co/Pt multilayers, 162 MgO/CoFeB/Ta heterostructure, 163 and FM/AFM interfaces. [164][165][166] The initial magnetization state at minimum energy for zero applied voltage can be given by 153,156…”

Section: Cfl Methodsmentioning

confidence: 99%

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

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Electronic spins provide an additional degree of freedom that can be used in modern spin-based electronic devices. Some benefits of spintronic devices include nonvolatility, energy efficiency, high endurance, and CMOS compatibility, which can be leveraged for data processing and storage applications in today's digital era. To implement such functionalities, controlling and manipulating electron spins is of prime interest. One of the efficient ways of achieving this in spintronics is to use the electric field to control electron spin or magnetism through the voltage-controlled magnetic anisotropy (VCMA) effect. VCMA avoids the movement of charges and significantly reduces the Ohmic loss. This article reviews VCMA-based spintronic devices for magnetic memory applications. First, we briefly discuss the VCMA effect and various mechanisms explaining its physical origin. We then mention various challenges in VCMA that impede it for practical VCMA-based magnetic memory. We review various techniques to address them, such as field-free switching operation, write error rate improvement, widening the operation window, enhancing the VCMA coefficient, and ensuring fast-read operation with low read disturbance. Finally, we draw conclusions outlining the future perspectives.

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Section: Cfl Methodsmentioning

confidence: 99%

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

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Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

Mishra,

Bhuktare

2024

Applied Physics Letters

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Enhancing the performance of magnetic random access memories (MRAMs) is crucial, considering speed, energy efficiency, and endurance. Spin-orbit torque-based MRAMs offer ultrafast operation and enhanced reliability. Still, the energy efficiency and external magnetic field requirement for deterministic switching of nanomagnets with perpendicular magnetic anisotropy (PMA) are a significant hurdle. To address these issues, one of the proposed solutions employs a conically magnetized free layer magnetic tunnel junction device featuring second-order PMA. This approach can minimize the required switching current density by leveraging the interplay between first- and second-order PMA energies. Additionally, coupling with exchange bias from the antiferromagnet can eliminate the need for an external field entirely. Our analysis investigates the impact of current density (magnitude and rise/fall time), first- and second-order PMA fields, exchange bias, and field-like torque on the device's switching performance. By optimizing the perpendicular magnetic anisotropies, we report improvement in the write error rate from 10−4 to 10−7. Our findings hold promise for magnetic memory applications.

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Coexistence of perpendicular and in-plane exchange bias using a single ferromagnetic layer in Pt/Co/Cr/CoO thin film

Öztürk¹,

Demirci²,

Erkovan³

et al. 2016

EPL

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We studied the temperature dependence of magnetization and exchange bias in a Pt/Co/Cr/CoO multilayer thin film. These magnetic multilayers are of particular interest since the easy axis of ultra-thin Co is strongly affected by the interfacial anisotropies of neighbouring Pt and Cr layers. The room temperature measurements show that the sample has a magnetic easy axis only in the film plane. However, upon cooling the sample, the easy axis of the magnetization departs from its initial orientation and typical easy-axis hysteresis loops are obtained for both inplane and perpendicular directions. In accordance with this change in the magnetization direction at lower temperatures, the sample shows an unexpected coexistence of perpendicular and in-plane exchange bias below the antiferromagnetic transition of CoO. The temperature dependence of the exchange bias field for both directions is also significantly different. Along the film plane, the exchange bias field monotonically decreases and disappears at 220 K with increasing temperature. For the perpendicular direction, however, the exchange bias field increases and reaches a maximum value at 80 K. Then it decreases and disappears at 150 K with further increasing temperature. The mechanisms behind this anomalous temperature dependence of the exchange bias as well as the step-like behaviour in the hysteresis curves are discussed.

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Perpendicular exchange bias in IrMn/Pt/[Co/Pt]3 multilayers with cone magnetization

Cited by 3 publications

References 28 publications

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

Coexistence of perpendicular and in-plane exchange bias using a single ferromagnetic layer in Pt/Co/Cr/CoO thin film

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