Perpendicular Anisotropy in Heusler Alloy Layers Induced by a V Seed Layer

Frost, William; Hirohata, Atsufumi

doi:10.1109/tmag.2016.2517738

Cited by 6 publications

(8 citation statements)

References 12 publications

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“…Since the discovery of the perpendicular magnetic anisotropy (PMA) at an Fe/MgO interface [16,[270][271], MgO layer insertion has been widely used to induce PMA, which is, however, not applicable for a GMR junction. Mn-based binary Heusler alloys are alternative choices [272].…”

Section: Perpendicular Magnetic Anisotropymentioning

confidence: 99%

Heusler alloys for spintronic devices: review on recent development and future perspectives

Elphick

Frost

Samiepour

et al. 2021

Science and Technology of Advanced Materials

225

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Heusler alloys are theoretically predicted to become half-metals at room temperature (RT). The advantages of using these alloys are good lattice matching with major substrates, high Curie temperature above RT and intermetallic controllability for spin density of states at the Fermi energy level. The alloys are categorised into half- and full-Heusler alloys depending upon the crystalline structures, each being discussed both experimentally and theoretically. Fundamental properties of ferromagnetic Heusler alloys are described. Both structural and magnetic characterisations on an atomic scale are typically carried out in order to prove the half-metallicity at RT. Atomic ordering in the films is directly observed by X-ray diffraction and is also indirectly probed via the temperature dependence of electrical resistivity. Element specific magnetic moments and spin polarisation of the Heusler alloy films are directly measured using X-ray magnetic circular dichroism and Andreev reflection, respectively. By employing these ferromagnetic alloy films in a spintronic device, efficient spin injection into a non-magnetic material and large magnetoresistance are also discussed. Fundamental properties of antiferromagnetic Heusler alloys are then described. Both structural and magnetic characterisations on an atomic scale are shown. Atomic ordering in the Heusler alloy films is indirectly measured by the temperature dependence of electrical resistivity. Antiferromagnetic configurations are directly imaged by X-ray magnetic linear dichroism and polarised neutron reflection. The applications of the antiferromagnetic Heusler alloy films are also explained. The other non-magnetic Heusler alloys are listed. A brief summary is provided at the end of this review.

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Section: Perpendicular Magnetic Anisotropymentioning

confidence: 99%

Heusler alloys for spintronic devices: review on recent development and future perspectives

Elphick

Frost

Samiepour

et al. 2021

Science and Technology of Advanced Materials

225

View full text Add to dashboard Cite

show abstract

“…We have shown that interfacial perpendicular magnetic anisotropy (PMA) in Co 2 FeSi Heusler alloys can be induced by addition of a tungsten seed layer. PMA can be maintained and increases up to a Co 2 FeSi layer thickness of 12.5 nm, a thickness much greater than usually observed [7,16]. Spin-valve structures were also deposited using the optimised W/Co 2 FeSi/W/Co 2 FeSi structure to maximise PMA, where switching clearly depends upon the Co 2 FeSi layer thickness as is desirable for applications.…”

Section: Discussionmentioning

confidence: 99%

“…Previous work has shown that a vanadium seed layer can induce PMA in Co 2 FeSi. Furthermore a second vanadium interface can maximise this effect leading to a film with a weak but dominant PMA [16]. In this work we have used a tungsten seed layer for Co 2 FeSi layers of increasing thickness.…”

Section: Introductionmentioning

confidence: 99%

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Heusler alloys with bcc tungsten seed layers for GMR junctions

Frost

Hirohata

2018

Journal of Magnetism and Magnetic Materials

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We demonstrate that polycrystalline Co 2 FeSi Heusler alloys films can be grown with perpendicular anisotropy without the use of an MgO interface. By heating the substrate to 400 • C prior to deposition and using a tungsten seed layer perpendicular anisotropy is induced in the Heusler layer. This is maintained as the thickness of the Co 2 FeSi is increased up to 12.5 nm. The layers with thickness dependent coercivity can be implemented into a giant magnetoresistance structure leading to spin-valve behaviour without the need for an exchange biased pinned layer.

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“…For a bcc vanadium seed layer, X-ray analysis shows that 25-nm-thick vanadium introduces a strong (110) orientation in the Co 2 FeSi Heusler alloy [109]. The B 2-texture of the Co 2 FeSi is found to match that of the vanadium proving that the texture is defined by the seed layer.…”

Section: Heusler-alloy Junctionsmentioning

confidence: 99%

Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions

et al. 2018

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For the sustainable development of spintronic devices, a half-metallic ferromagnetic film needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi level at room temperature. One of the most promising candidates for such a film is a Heusler-alloy film, which has already been proven to achieve the half-metallicity in the bulk region of the film. The Heusler alloys have predominantly cubic crystalline structures with small magnetocrystalline anisotropy. In order to use these alloys in perpendicularly magnetised devices, which are advantageous over in-plane devices due to their scalability, lattice distortion is required by introducing atomic substitution and interfacial lattice mismatch. In this review, recent development in perpendicularly-magnetised Heusler-alloy films is overviewed and their magnetoresistive junctions are discussed. Especially, focus is given to binary Heusler alloys by replacing the second element in the ternary Heusler alloys with the third one, e.g., MnGa and MnGe, and to interfacially-induced anisotropy by attaching oxides and metals with different lattice constants to the Heusler alloys. These alloys can improve the performance of spintronic devices with higher recording capacity.

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Perpendicular Anisotropy in Heusler Alloy Layers Induced by a V Seed Layer

Cited by 6 publications

References 12 publications

Heusler alloys for spintronic devices: review on recent development and future perspectives

Heusler alloys for spintronic devices: review on recent development and future perspectives

Heusler alloys with bcc tungsten seed layers for GMR junctions

Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions

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