Perovskite heterostructures grown by MOCVD

The deposition of epitaxial CeO2 nanostructured thin films on rutile (TiO2) substrates by metal−organic chemical vapor deposition (MOCVD) has been carried out in a wide temperature range. Films have been grown on (001)TiO2 from the Ce(III) 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato diglyme adduct (Ce(hfa)3·diglyme). The X-ray diffraction patterns of all samples grown in the 450−750 °C deposition temperature range point to the formation of 〈100〉-oriented CeO2 films, whereas at higher deposition temperatures (850−1050 °C) all the deposited CeO2 films show 〈111〉 texture. fwhm rocking curves values clearly indicate that the texturing of CeO2 crystallites is greatly improved upon increasing the deposition temperature in both cases. Typical pole figure patterns demonstrate a cube-on-cube epitaxial growth in the case of 〈100〉-oriented CeO2 films, whereas 〈111〉-oriented CeO2 films show different in-plane alignments of the crystallites. A possible explanation for textural changes is proposed.

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“…Identical behavior has already been reported for other heteroepitaxial pairs, such as (111) BaTiO 3 || (001)YSZ or (111) LaAlO 3 || (001) YSZ …”

Section: Resultssupporting

confidence: 80%

Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO₂ Substrate

et al. 2003

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“…In fact, one can expect higher selectivity of the stabilization effect and more rich chemistry exploring the growth on the two-dimensional lattices with lower symmetry (rectangular, rectangular centered, or monoclinic). On the other hand, the strong dependence of the stabilization effect on the lattice mismatch allows for the possibility of the selective growth, ,, which can be very useful in microelectronic technology.…”

Section: Discussionmentioning

confidence: 99%

“…The epitaxial stabilization of nickelates allowed us to carry out selective MOCVD growth of NdNiO 3 on (La,Pr) 0.7 Ca 0.3 MnO 3 epitaxial film patterned by a polycrystalline CuO layer deposited over manganite film. , In this case the nickelate epitaxial layer was selectively formed only on a bare manganite surface due to a close lattice match of their structures. In contrast, no NdNiO 3 formation was observed in areas covered with CuO.…”

Section: Epitaxial Stabilization Accompanied By a Change In The Metal...mentioning

confidence: 99%

Epitaxial Stabilization of Oxides in Thin Films

et al. 2002

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A survey of recent experimental results is given, presenting the growth of oxide epitaxial thin films in P−T−x conditions, which are far from those necessary for the existence of corresponding phases in a bulk state. The unstable in bulk BaCu3O4, NdMn7O12, RNiO3, and unusual polymorphous forms of BaRuO3, RMnO3, TiO2, and Mn3O4 are some examples. The stabilizing effect is observed only if epitaxial growth is induced. A rich variety of the effect observations are demonstrated to be of a thermodynamic origin, rather than of a kinetic one. Epitaxial stabilization is shown to be the result of the low energy of coherent interfaces formed due to epitaxy.

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“…Thus the epitaxial NdNiO 3 films obtained on a buffer manganite layer, (La,Pr) 0.7 Ca 0.3 MnO 3 , which was, in turn, deposited on the perovskite LaAlO 3 and SrTiO 3 substrates were substantially dissimilar. Quite perfect epitaxial layers of NdNiO 3 up to a thickness of 200 nm were obtained on the (La,Pr) 0.7 Ca 0.3 MnO 3 /LaAlO 3 substrates, whereas in the case of (La,Pr) 0.7 Ca 0.3 MnO 3 /SrTiO 3 , the perovskite phase contained simple oxides even at early stages of the growth (films with a similar phase composition were grown on the SrTiO 3 substrate without a buffer layer 82 ). The epitaxial quality of the (La,Pr) 0.7 Ca 0.3 MnO 3 buffer layer grown on both substrates was equally high; however, the epitaxial stresses in the layers had opposite signs on different substrates, namely the buffer layer on LaAlO 3 experienced compression and that on SrTiO 3 underwent stretching in the substrate plane.…”

Section: Application Of Epitaxial Stabilisation For the Development O...mentioning

confidence: 99%

The role of heteroepitaxy in the development of new thin-film oxide-based functional materials

Kaul¹,

Gorbenko²,

Kamenev³

2004

Russ. Chem. Rev.

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The methods of synthesis of new oxide compounds and The methods of synthesis of new oxide compounds and thin-film materials based on the use of heteroepitaxy are consid-thin-film materials based on the use of heteroepitaxy are considered. The thermodynamic model and the theory of the epitaxial ered. The thermodynamic model and the theory of the epitaxial stabilisation phenomenon are outlined, the role of thermody-stabilisation phenomenon are outlined, the role of thermodynamic and structure-geometric factors determining the possibility namic and structure-geometric factors determining the possibility of epitaxial stabilisation of unstable phases is interpreted. The use of epitaxial stabilisation of unstable phases is interpreted. The use of epitaxial stabilisation for the design of heterostructures with of epitaxial stabilisation for the design of heterostructures with specific electric properties is demonstrated. The characteristic specific electric properties is demonstrated. The characteristic features of the structural relations between the film and substrate features of the structural relations between the film and substrate materials, resulting in the formation of thin films with different materials, resulting in the formation of thin films with different numbers of variants, are discussed. The bibliography includes 128 numbers of variants, are discussed. The bibliography includes 128 references references. .

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Perovskite heterostructures grown by MOCVD

Cited by 3 publications

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Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO₂ Substrate

Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO₂ Substrate

Epitaxial Stabilization of Oxides in Thin Films

The role of heteroepitaxy in the development of new thin-film oxide-based functional materials

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Perovskite heterostructures grown by MOCVD

Cited by 3 publications

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Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO2 Substrate

Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO2 Substrate

Epitaxial Stabilization of Oxides in Thin Films

The role of heteroepitaxy in the development of new thin-film oxide-based functional materials

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Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO₂ Substrate

Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO₂ Substrate