Peripheral circuit designs using low‐temperature p‐type poly‐Si thin‐film transistors

Abstract

Abstracts -P-type low-temperature (450°C) polycrystalline-silicon thin-film-transistor circuits for peripheral driver integration in active-matrix displays are proposed and verified. A low-voltage (5 V) driven poly-Si scan driver is designed by employing a level shifter and shift register. A source driver for six-bit digital interface is proposed, and the building blocks such as latch, DAC, and analog buffer are described. The latch samples and holds the digital bits (D and D′) without an output voltage loss. A new source-follower type analog buffer is developed and exhibits a small offset deviation regardless of the V TH variation of the buffer TFT. The simulation and measurement results ensure that the proposed circuits were successfully designed for p-type panel integration. FIGURE 1 -P-type poly-Si TFT panel integration: (a) analog interface using the demultiplexing block drive and (b) proposed p-type integration for digital interface.

Review of Integrated Gate Driver Circuits in Active Matrix Thin-Film Transistor Display Panels

“…Unlike n-type a-Si TFTs, LTPS TFT backplanes have mainly used p-type TFTs for manufacturing AM displays [76][77][78][79][80][81]. Because p-type TFTs work in opposite ways to n-type TFTs, we have to change the point of view for the operation of shift registers.…”

P.4: A Charge‐Cyclic Digital‐to‐Analog Converter for IGZO TFT Integrated Data Driver

“…System on panel (SoP) has attracted enormous attentions in FPD field due to potentially enabling a significant improvement on performance, cost and reliability [1], [2]. The primary stage of fulfilling the SoP is the implementation of the integrated scan and data drivers with TFT technology.…”