2008
DOI: 10.1088/0957-4484/19/21/215602
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Periodically twinned SiC nanowires

Abstract: Twinning has been recognized to be an important microstructural defect in nanoscale materials. Periodically twinned SiC nanowires were largely synthesized by the carbothermal reduction of a carbonaceous silica xerogel prepared from tetraethoxysilane and biphenyl with iron nitrate as an additive. The twinned β-SiC nanowires, with a hexagonal cross section, a diameter of 50-300 nm and a length of tens to hundreds of micrometers, feature a zigzag arrangement of periodically twinned segments with a rather uniform … Show more

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Cited by 133 publications
(100 citation statements)
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“…As a kind of stacking fault, twins are usually observed in nanostructures with a face-centered cubic (fcc) lattice. [23] The inset in Figure 1(b) also demonstrates the bright-field TEM image of S18 and corresponding high-resolution transmission microscopy (HRTEM) image and selected area electron diffraction (SAED) pattern taken along the direction of [110] zone axis. The twin boundary is the (111) plane and the side surface of each segment is the (111) plane.…”
mentioning
confidence: 99%
“…As a kind of stacking fault, twins are usually observed in nanostructures with a face-centered cubic (fcc) lattice. [23] The inset in Figure 1(b) also demonstrates the bright-field TEM image of S18 and corresponding high-resolution transmission microscopy (HRTEM) image and selected area electron diffraction (SAED) pattern taken along the direction of [110] zone axis. The twin boundary is the (111) plane and the side surface of each segment is the (111) plane.…”
mentioning
confidence: 99%
“…7,8 Recently, twinned structures have also been reported in other semiconductor and ceramic materials, such as GaP, 9 ZnS, 10 and SiC. 11 Because twin boundaries (TBs) in these nano wires will strongly affect their mechanical and physical properties, it is of great signifi cance to investigate the details of twin structures and their roles in the nanowires. 12,13 This work focuses on revealing the strengthening mechanisms and dislocation dynamics due to twinning in copper nanowires.…”
Section: Strengthening Mechanisms and Dislocation Dynamics In Twinnedmentioning
confidence: 99%
“…Particularly in harsh conditions, SiC devices are much better than Si and GaAs devices [1]. Though SiC has hundreds of stable polytypes, the most commonly used ones are 3C-SiC, 4H-SiC, and 6H-SiC [2]. In recent years, there have been many experimental and theoretical efforts invested in the development of SiC nanostructures [3][4][5].…”
Section: Introductionmentioning
confidence: 99%