Periodically Rippled Graphene: Growth and Spatially Resolved Electronic Structure

Parga, Amadeo L. Vázquez de; Calleja, F.; Borca, Bogdana; Passeggi, M. C. G.; Hinarejos, J. J.; Guinea, F.; Miranda, Rodolfo

doi:10.1103/physrevlett.100.056807

Cited by 592 publications

(290 citation statements)

References 23 publications

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“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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“…Theoretical models of ripples in graphene suggest that the resulting local surface curvatures affect the microscopic parameters of the electronic states such as hopping matrix elements and the coupled dispersion relations. In addition to changing microscopic parameters and creating local effects such as strong pseudomagnetic fields 19 , structural ripples can also result in an added periodic potential 20 in the energy landscape. The effects of such periodic potentials on the electronic structure of graphene have been extensively explored theoretically [21][22][23][24][25] where it was shown that periodic potentials may not only change band parameters similar to the Fermi velocity but also induce additional zero energy modes and bandgaps.…”

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confidence: 99%

Ripple-modulated electronic structure of a 3D topological insulator

et al. 2012

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3D topological insulators, similar to the Dirac material graphene, host linearly dispersing states with unique properties and a strong potential for applications. A key, missing element in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Analogy with graphene suggests a possible avenue via a topographic route by the formation of superlattice structures such as a moiré patterns or ripples, which can induce controlled potential variations. However, while the charge and lattice degrees of freedom are intimately coupled in graphene, it is not clear a priori how a physical buckling or ripples might influence the electronic structure of topological insulators. Here we use Fourier transform scanning tunneling spectroscopy to determine the effects of a one-dimensional periodic buckling on the electronic properties of Bi 2 Te 3. By tracking the spatial variations of the scattering vector of the interference patterns as well as features associated with bulk density of states, we show that the buckling creates a periodic potential modulation, which in turn modulates the surface and the bulk states. The strong correlation between the topographic ripples and electronic structure indicates that while doping alone is insufficient to create predetermined potential landscapes, creating ripples provides a path to controlling the potential seen by the Dirac electrons on a local scale. Such rippled features may be engineered by strain in thin films and may find use in future applications of topological insulators.

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“…Graphene ripples less than 1 nm high, for example, have been shown to cause spatial charge redistribution [3,4] and electron scattering [5], to enhance graphene's chemical reactivity [6,7], and affect its thermal stability [8,9]. Aiming for high-quality graphene electronics, the search for suitable substrates has increasingly focused on layered materials, like mica [10], hexagonal boron nitride (h-BN) [11], or MoS 2 [12].…”

Section: Introductionmentioning

confidence: 99%

Harmonic model of corrugations of incommensurate two-dimensional layers

Thürmer

Spataru

2017

Phys. Rev. B

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Abstract:We developed a method to predict the height corrugations of moiré structures resulting from varying azimuthal orientations of graphene on hexagonal boron nitride substrates. Our model accounts for the flexural rigidity of graphene and assumes a sinusoidal corrugation of the preferred height of C atoms above the substrate. Using 4 parameters derived from density functional theory (DFT) the model computes corrugations of incommensurate moiré structures currently inaccessible to DFT with an estimated accuracy on the order of 0.01 Å. We predict that azimuthally aligned graphene domains are energetically favored over rotated ones.

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Periodically Rippled Graphene: Growth and Spatially Resolved Electronic Structure

Cited by 592 publications

References 23 publications

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Ripple-modulated electronic structure of a 3D topological insulator

Harmonic model of corrugations of incommensurate two-dimensional layers

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