Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications

Li, Xiaocheng; Li, Junshuai; Chen, Tingting; Tay, Beng Kang; Wang, Jianxiong; Yu, Hongyu

doi:10.1007/s11671-010-9701-3

Cited by 64 publications

(43 citation statements)

References 29 publications

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“…X. Li et al studied the efficient antireflective properties of periodically aligned Si nano-pillar arrays [14]. They fabricated the periodically nano-patterned Si structures by using silver catalyzed chemical etching process and found that the reflection can be remarkably reduced in the wavelength range of 200∼1000 nm.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique

Sun

Lü

et al. 2013

Nano-Micro Lett.

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Nano-structured photon management is currently an interesting topic since it can enhance the optical absorption and reduce the surface reflection which will improve the performance of many kinds of optoelectronic devices, such as Si-based solar cells and light emitting diodes. Here, we report the fabrication of periodically nano-patterned Si structures by using polystyrene nano-sphere lithography technique. By changing the diameter of nano-spheres and the dry etching parameters, such as etching time and etching power, the morphologies of formed Si nano-structures can be well controlled as revealed by atomic force microscopy. A good broadband antireflection property has been achieved for the formed periodically nano-patterned Si structures though they have the low aspect ratio (<0.53). The reflection can be significantly reduced compared with that of flat Si substrate in a wavelength range from 400 nm to 1200 nm. The weighted mean reflection under the AM1.5 solar spectrum irradiation can be as low as 3.92% and the corresponding optical absorption is significantly improved, which indicates that the present Si periodic nano-structures can be used in Si-based thin film solar cells.

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Section: Resultsmentioning

confidence: 99%

Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique

Sun

Lü

et al. 2013

Nano-Micro Lett.

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“…7 8 However, film based Sidevices do not have efficient photoresponse properties due to the layer reflectivity and longer carrier collection distance. 9 10 In order to overcome these obstacles, we need to introduce the different structure such as wires, cones/tips and pillars in the range of microns to nanoscales, [11][12][13][14][15][16] which enable to suppress the device reflectance to enhance the device efficiency. In addition, the smaller diameter of pillars or wires giving an optimum carrier collection distance for generated charge carries in depletion region under light illuminations.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the smaller diameter of pillars or wires giving an optimum carrier collection distance for generated charge carries in depletion region under light illuminations. 11 13 Herein, we mainly focused on Si pillar arrays with a probability of having low defects and desirable widths. Moreover, by introducing the anti-reflective coating on Si pillar arrays lead to further reduction of device reflectivity.…”

Section: Introductionmentioning

confidence: 99%

Effect of surficial length on transparent conductor-coated Si pillar arrays

Duraisamy¹,

Ju-HyungYun²,

Kim³

2015

mat express

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We report an indium-tin-oxide (ITO) coated silicon (Si) pillar arrays heterojunction device for providing high performing photoresponse. The photolithography is used to fabricate the periodic patterns of Si pillar arrays with two different widths/periods: 2 m/5 m and 2 m/7 m at constant depth (1.1 m). A transparent and antireflective ITO coated Si pillar arrays are achieved at a room temperature and then subjected to rapid thermal process at 300 C for 10 min. The reflectance of 2/5 pillar patterns revealed the lower value of 14.4% than that of 2/7 pillar patterns (reflectance of 25.8%). The photoresponse of fabricated heterojunction device is enhanced in response with surficial length. The highest photoresponse ratios of 1656% and 1556% are observed for prepared devices at a wavelength of 900 nm. These results confirmed that the improved photoresponse is observed by surficial length enhancement. Therefore, the fabricated ITO coated Si heterojunction play an important role in photovoltaic devices.

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“…However, more than 35% of incident light is reflected back from silicon (Si) surfaces by Fresnel reflection because of the large refractive index discontinuity at the interface of Si and air. To suppress the Fresnel reflection, ARCs directly patterned on Si substrates have been extensively explored both experimentally [1][2][3][4] and theoretically, [5][6][7] and various randomly or periodically structured surfaces, including upright or inverted pyramids, 1,2,9,10 nanopillars, [11][12][13][14][15] nanowires/nanocones, 3,16,17 and porous structures 18 have been reported. However, the controllable, low-cost, and efficient fabrication of such nanostructures still remains a problem.…”

Section: Introductionmentioning

confidence: 99%

Antireflection characteristics of inverted nanopyramid arrays fabricated by low-cost nanosphere lithography technology

Wang

Dong

et al. 2013

Proceedings of the Institution of Mechanical Engineers, Part N:

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A simple and effective process based on nanosphere lithography for the fabrication of periodic inverted nanopyramid structure is presented in this article. The prepared nanostructure has almost a drop of 40% in the average reflectance at normal incidence, when compared with its corresponding bare silicon surface. Moreover, we obtained the reflection spectra for bare silicon substrate and prepared nanostructure through experiments and numerical calculations, and the results agreed well with each other, respectively. Therefore, we can combine the simulation method and fabrication method together to optimize the nanostructured antireflection coatings for better antireflection characteristics, and this methodology is robust and promising for the development of crystalline silicon solar cells. We further discussed the influences of pyramid size and the lattice constant of the nanopyramid array on the antireflection effect by numerical calculation, and we got a conclusion that the antireflection effect is positively correlated with the area-ratio defined as the ratio of the sum of the area of the nanopyramid holes in a unit cell to the area of a unit cell. Finally, we provide some direction and help for other researchers about the antireflection application of inverted nanopyramid arrays.

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Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications

Cited by 64 publications

References 29 publications

Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique

Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique

Effect of surficial length on transparent conductor-coated Si pillar arrays

Antireflection characteristics of inverted nanopyramid arrays fabricated by low-cost nanosphere lithography technology

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