Period multiplying and chaotic response in driven n‐Ge with repulsive defect centres

Domain instability in p-Ge⟨Au⟩ in a nonlinear regime

“…The portion of the characteristic, which is plotted by a double line, represents the region of current oscillations. According to the theory and experimental data [6][7][8][9][10][11][12][13][14], the oscillations generated in the sample can be accounted for by the periodic appearance, motion and disintegration at a contact of high-electric-field domains. A study of the field distribution along the sample demonstrated that in p-Ge(Au), in contrast to n-Ge(Au), a high-field domain is always generated at the anode and moves towards the cathode.…”

“…The recombination current instability, first reported by Stafeev [5] and Bonch-Bruevich and Kalashnikov [6][7][8], has been studied in sufficient detail in Au-doped n-Ge, a typical nonlinear system, in the temperature range 16-35 K. This type of instability has also been studied in other Ni-and Mn-doped materials [9][10][11][12][13][14].…”

Nonlinear current–voltage characteristics and recombination current instability in p‐Ge(Au)

“…Figure 1 shows a typical I -V characteristic for the case of optical generation of nonequilibrium carriers. According to the theory [1,2] and experimental data [6][7][8][9][10][11][12][13][14], the oscillations generated in the sample can be explained by periodic appearance, motion and disintegration at a contact of a high electric field. A study of the field distribution along the sample demonstrated that in p-Ge(Au), in contrast to n-Ge(Au), a high-field domain is always generated at the anode and moves towards the cathode.…”

“…The recombination current instability, first reported by Stafeev [5], and Bonch-Bruevich, Konstantinov, and Kalashnikov [6][7][8][9], has been studied in sufficient detail in Аu-compensated n-Ge, a typical nonlinear system, in the temperature range [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] K. This type of instability has been studied in other Ni-and Mn-doped materials [9][10][11][12][13][14] as well. All these results have been obtained in a linear approximation on a threshold of the recombination instability beginning.…”