Performances of GeSnSbTe Material for High-Speed Phase Change Memory

Lee, Chain-Ming; Chao, Der-Sheng; Chen, Yi-Chan; Chen, Ming-Jung; Yen, P.H.; Chen, Chih‐Wei; Hsu, Hong-Hui; Wang, Wenhan; Chen, Wei-Su; Chen, F.; Hsiao, Tsai-Chu; Kao, Ming-Jer; Tsai, Ming-Jinn

doi:10.1109/vtsa.2007.378936

Cited by 4 publications

(1 citation statement)

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“…Phase change random access memory (PCRAM) has attracted great interest as a candidate for next generation non-volatile devices with the meet of increasing need for high density, low power consumption, and fast switching speed with CMOS logic process. 1,2 Reversible phase change between the amorphous (high resistance, RESET state) and crystalline (low resistance, SET state) of phase change material is basic operation principle in PCRAM. Ternary compound of Ge, Sb, and Te, especially Ge 2 Sb 2 Te 5 (GST225) has been widely investigated and accepted as a phase change material for the realization of PCRAM device.…”

Section: Introductionmentioning

confidence: 99%

Characteristics Of SnSbSe (SSS) Thin Films Grown by Atomic Layer Deposition for High Performance Phase Change Random Access Memory (PCRAM)

Lee

Kang

et al. 2013

ECS Trans.

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Characteristics of SSS(SnSbSe) thin films grown by atomic layer deposition(ALD) were investigated for high performance phase change random access memory(PCRAM). Adopting super-cycle concept which consist of SbSe binary and Sn single sub-cycle and adjusting Sb/Se exposure ratio, stoichiometry was successfully controlled. Microstructure and crystallization speed of ALD Sn-doped Sb-rich SbSe films were confirmed. Furthermore, ALD SSS film showed excellent gap-filling performance using confined cell structure of aspect ratio 5.0 (cell dimension 15nm).

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Section: Introductionmentioning

confidence: 99%