Performances of epitaxial GaAs detectors

Bréelle, É.; Samic, H.; Sun, G.C.; Bourgoin, J. C.

doi:10.1016/s0168-9002(03)01543-2

Cited by 14 publications

(7 citation statements)

References 10 publications

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“…Moreover, the EL2 density is lower as well, partly because the films are grown at a lower temperature. It was as early as in the 1970s that epitaxial GaAs detectors were fabricated with high CCE and energy resolution [30].…”

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

“…Thick epitaxial GaAs films are mostly grown by liquid-phase epitaxy [18,28] or chemical vapor deposition [6,17,30], particularly metal-organic one. Liquidphase epitaxy can yield films up to 150-250 µm thick, but these tend to show an undulating surface.…”

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

“…This idea came into use as late as in the 1970s, when techniques of high-quality epitaxial growth began to be intensely developed [30].…”

Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning

confidence: 99%

“…A method has recently been reported for growing an i-layer 100-400 µm thick on an n-substrate without doping compensation [6,17,30,41]. Layers so obtained are virtually free from the drawbacks of bulkgrown materials, being similar to epitaxial layers grown by other techniques.…”

Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning

confidence: 99%

“…Finally, we note that research into p-i-n detectors tends to focus on the band structure of epitaxial films [17,18,30,[41][42][43][44].…”

Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning

confidence: 99%

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GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review

2005

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An attempt is made to analyze and summarize the literature data on hybrid x-ray GaAs pixel detectors designed for medical imaging. Criteria are stated for selecting a semiconductor material. It is shown that GaAs is currently preferable to the other semiconductor materials. Detector figures of merit used to select a semiconductor material and a process technology are listed. Major types of x-ray detector based on bulk-grown or epitaxial GaAs are described, namely, the planar Schottky, the planar p-i-n, and the 3D detector. The influence is considered of different process steps (contact formation, passivation coating, hybridization, etc.) on detector figures of merit. Monolithic technology is briefly discussed.

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Section: Selection Of a Sensing Materialsmentioning

confidence: 99%