Performance optimization of SnO2:F thin films under quasi-vacuum laser annealing with covering a transparent PET sheet: A study using processing map

Ren, Naifei; Yang, Guangyu; Huang, Liyong; Wei, Zimin; Ren, Na

doi:10.1016/j.apsusc.2020.145334

Cited by 23 publications

(3 citation statements)

References 56 publications

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“…The ultra-thin metals, [1,2] conducting polymers, [3][4][5] carbon nanotubes, [6][7][8] and especially graphene [9][10][11][12][13] have been extensively considered in recent years, while they have not yet been able to replace the mainstream DOI: 10.1002/smll.202304721 transparent conductor oxides (TCO) since it is a challenge for them to combine the high light transmittance and the high electrical conductivity. Besides, TCOs such as ZnO:Al (AZO), [14][15][16][17][18] SnO 2 :F (FTO) , [19][20][21][22][23] and In 2 O 3 :Sn (ITO) [24][25][26][27] have excellent chemical and environmental stability and nontoxicity, and their conductivity can be flexibly tuned by changing the doping density in a wide range from 10 15 to 10 22 cm −3 . [28,29] Among all the explored TCOs, ITO is the most mainstream selection because the spherical spread vacant s orbitals of In and Sn can contribute highly delocalized conduction bands with small effective electron mass, [30,31] and consequently contribute to high electron mobility.…”

Section: Introductionmentioning

confidence: 99%

Insight into the High Mobility and Stability of In₂O₃:H Film

Ge,

Liu,

Zhu

et al. 2023

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Wide bandgap semiconductors, particularly In2O3:Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high‐concentration oxygen vacancy (VO) defects, the mobility of ITO is always lower than 40 cm2 V−1 s−1. Recently, hydrogen‐doped In2O3 (In2O3:H) films have been proven to have high mobility (>100 cm2 V−1 s−1), but the origin of this high mobility is still unclear. Herein, a high‐resolution electron microscope and theoretical calculations are employed to investigate the atomic‐scale mechanisms behind the high carrier mobility in In2O3:H films. It is found that VO can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of VO, which accounts for high carrier mobility. The thermal stability and acid–base corrosion mechanism of the In2O3:H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 °C), while acidic or alkaline environments can cause damage to the In2O3 grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In2O3:H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.

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Section: Introductionmentioning

confidence: 99%

Insight into the High Mobility and Stability of In₂O₃:H Film

Ge,

Liu,

Zhu

et al. 2023

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“…Tin dioxide (SnO 2 ) is a typical n-type semiconductor material with a wide band gap of 3.6 eV. Nano-sized SnO 2 has been widely used in photocatalysis, solar cells, conductive transparent glass, and harmful gas detection [ 17 , 18 , 19 , 20 ]. Semiconductor SnO 2 has been widely used in the detection of combustible and toxic gases such as alcohol [ 21 ], acetone [ 22 ], butanone [ 23 ], and H 2 S [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of SnO₂ nanoparticles for formaldehyde detection with high sensitivity and good selectivity

Gao

Zhu

et al. 2020

J. Mater. Res.

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“…FTO is famous for its excellent chemical and thermal stability, heat and corrosion resistance as well as even low cost and extensive sources and is considered as one of substitutes for ITO. Nevertheless, the photoelectric properties of FTO are not as good as ITO and need to be improved [8,9].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Photoelectric Properties of Patterned Ag Nanoparticles on FTO/Glass Substrate by Laser Etching and Driving Layer Strategy

Huang

Zhang

et al. 2020

Acta Metall. Sin. (Engl. Lett.)

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An effective method based on laser etching and driving layer strategy was proposed to prepare patterned Ag nanoparticles (Ag NPs) on fluorine-doped tin oxide (FTO)/glass substrate and thus to enhance the photoelectric properties. This method successively included depositing an aluminum-doped zinc oxide (AZO) driving layer, laser etching, depositing an Ag layer, furnace annealing and laser removal. Different AZO and Ag layer thicknesses were adopted, and the surface morphology, crystal structure and photoelectric properties were investigated. An Ag NPs/FTO/glass sample without an AZO driving layer was prepared for comparison. It was found that furnace annealing of the Ag layer combined with the AZO driving layer, rather than that without the AZO driving layer, was more conducive to generating patterned Ag NPs. Using a 20-nmthick AZO layer and a 150-nm-thick Ag layer led to the formation of uniformly distributed Ag NPs being aligned along the laser-etched grooves to form a pattern. The as-obtained sample had the best comprehensive photoelectric property with an average transmittance of 79.95%, a sheet resistance of 7.11 Ω/sq and the highest figure of merit of 1.50 × 10 −2 Ω −1 , confirming the feasibility of the proposed method and providing enlightenment for related researches of transparent conductive oxide-based films.

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Performance optimization of SnO2:F thin films under quasi-vacuum laser annealing with covering a transparent PET sheet: A study using processing map

Cited by 23 publications

References 56 publications

Insight into the High Mobility and Stability of In₂O₃:H Film

Insight into the High Mobility and Stability of In₂O₃:H Film

Synthesis of SnO₂ nanoparticles for formaldehyde detection with high sensitivity and good selectivity

Preparation and Photoelectric Properties of Patterned Ag Nanoparticles on FTO/Glass Substrate by Laser Etching and Driving Layer Strategy

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Performance optimization of SnO2:F thin films under quasi-vacuum laser annealing with covering a transparent PET sheet: A study using processing map

Cited by 23 publications

References 56 publications

Insight into the High Mobility and Stability of In2O3:H Film

Insight into the High Mobility and Stability of In2O3:H Film

Synthesis of SnO2 nanoparticles for formaldehyde detection with high sensitivity and good selectivity

Preparation and Photoelectric Properties of Patterned Ag Nanoparticles on FTO/Glass Substrate by Laser Etching and Driving Layer Strategy

Contact Info

Product

Resources

About

Insight into the High Mobility and Stability of In₂O₃:H Film

Insight into the High Mobility and Stability of In₂O₃:H Film

Synthesis of SnO₂ nanoparticles for formaldehyde detection with high sensitivity and good selectivity