Performance optimization of SiC piezoresistive pressure sensor through suitable piezoresistor design

Tian, Baohua; Shang, Haiping; Zhao, Lihuan; Wang, Weibing

doi:10.1007/s00542-020-05175-z

Cited by 17 publications

(9 citation statements)

References 20 publications

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“…This is because SiC is attracting attention as a promising material for MEMS mechanical sensors used in harsh environments because of its superior mechanical and electrical properties and excellent chemical inertness at elevated temperatures. Concurrently with these studies on SiC application devices, numerous studies on the piezoresistive effects in cubic (3C) and hexagonal (2H, 4H, 6H) polytypes of n-and p-type SiC have been reported [6][7][8][9][10]. As the piezoresistive effect of 3C-SiC has been observed to be useful for SiC-MEMS, several experimental data that can contribute to practical applications, such as the orientation and temperature dependencies of gauge factors (GFs) for n-and p-type 3C-SiC, have been reported [6,7].…”

Section: Introductionmentioning

confidence: 92%

Surface-potential-modulated piezoresistive effect of core–shell 3C-SiC nanowires

Uesugi¹,

Nakata²,

Inoyama³

et al. 2022

Nanotechnology

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The effect of surface potential on the carrier mobility and piezoresistance of core–shell silicon carbide nanowires (SiC NWs) was investigated to realize small and sensitive SiC-microelectromechanical systems sensors. The p-type cubic crystalline SiC (3C-SiC) NWs were synthesized via the vapor–liquid–solid method and coated with silicon dioxide (SiO2) or aluminum oxide (Al2O3) dielectric shells to form core–shell structured NWs with different surface potentials. Four-point bending devices (FBDs) with a field-effect transistor (FET) configuration integrating a single core–shell 3C-SiC NW as the FET channel were fabricated to apply an additional electric field and strain to the core–shell 3C-SiC NWs. The fixed oxide charge densities of the SiO2 and Al2O3 shells showed positive and negative values, respectively, which were equivalent to electric fields of the order of several hundred thousand volt per centimeter in absolute values. In the core–shell 3C-SiC NWs with originally low impurity concentrations, the electric field induced by the fixed oxide charge of the shells can determine not only the electrical conduction but also the charge carriers in the NWs. Bending tests using the FBDs showed that the piezoresistive effect of the SiO2-coated NW was almost the same as that of the as-grown 3C-SiC NW reported previously, regardless of the gate voltage, whereas that of the Al2O3-coated NW was considerably enhanced at negative gate voltages. The enhancement of the piezoresistive effect was attributed to the piezo-pinch effect, which was more pronounced in the NW, where the carrier density at the core–shell interface is enhanced by the electric field of the dielectric.

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Section: Introductionmentioning

confidence: 92%

Surface-potential-modulated piezoresistive effect of core–shell 3C-SiC nanowires

Uesugi¹,

Nakata²,

Inoyama³

et al. 2022

Nanotechnology

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“…Carbon is one of the most fundamental and essential elements in nature, and it also has a profound connection to human life. The orbital hybridization characteristics of carbon elements involve the hybridization of sp 1 , sp 2 , and sp 3 . These different hybridization forms enable carbon to form diverse chemical bonds, thereby giving carbon materials their distinctive properties and application characteristics.…”

Section: Functional Materialsmentioning

confidence: 99%

“…The pressure sensor is one of the most frequently utilized sensors in industrial applications. Traditional pressure sensors are based on rigid materials such as semiconductors [1] and piezoelectric crystals [2]. Traditional pressure sensors benefit from well-established design and fabrication technologies, enabling them to precisely gauge pressure across a broad spectrum.…”

Section: Introductionmentioning

confidence: 99%

Recent progress of flexible pressure sensors: from principle, structure to application characteristics

Liu,

Qiu

et al. 2024

Flex. Print. Electron.

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Due to its conformal capability, the flexible pressure sensor has a wide range of applications in wearable devices, health monitoring, human-computer interfaces, and other fields. Sensors designed according to various principles and application scenarios exhibit a variety of good characteristics such as high sensitivity, high transparency, a wide detection limit, and low crosstalk. However, achieving all these exceptional functions within a single sensor is evidently challenging. Therefore, it is prudent to emphasize specific advantageous features depending on the unique usage environments and application scenarios. This paper first describes the classification of flexible pressure sensors based on their working principle, then summarizes the commonly used materials and sensor characteristics, and finally reviews the application characteristics of flexible pressure sensors based on different application fields and scenarios. The bottleneck challenges encountered in the development of flexible pressure sensors are discussed, and the foreseeable development strategy is predicted.

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“…One promising approach involves the utilization of silicon carbide (SiC), a material known for its superior properties compared to silicon. SiC offers higher strength, higher thermal conductivity, higher elastic modulus, and a lower thermal expansion coefficient [64,65]. This makes it wellsuited for withstanding harsh conditions in which piezoresistive pressure sensors may be deployed.…”

Section: Mems Technology: Piezoresistive Sensingmentioning

confidence: 99%

Development of IOT-based low-cost MEMS pressure sensor for groundwater level monitoring

Barzegar

Blanks²,

Gharehdash

et al. 2023

Meas. Sci. Technol.

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Groundwater level monitoring is critical to protect and manage of groundwater resources. A properly designed and executed instrumentation can play important role to increase the quality and reliability of collected data and reducing total monitoring costs. The efficiency of the instrumentation is mainly depending on the accuracy and reliability of the installed sensors. This study presents, the testing and application of a cost-effective pressure sensor (0-689 kPa) range) for water level monitoring based on microelectromechanical system (MEMS) technology and Internet of things (IOT) concept. The sensor performance in term of accuracy, precision, repeatability, temperature was investigated in laboratory columns (with constant water level, increasing and decreasing water levels at various rates) and in-situ conditions in an observation bore (with natural groundwater level fluctuations). The results shows that the MEMS sensor capable of providing reliable and adequate monitoring scheme with an accuracy of 0.31% full scale (FS) (2.13 kPa).

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Performance optimization of SiC piezoresistive pressure sensor through suitable piezoresistor design

Cited by 17 publications

References 20 publications

Surface-potential-modulated piezoresistive effect of core–shell 3C-SiC nanowires

Surface-potential-modulated piezoresistive effect of core–shell 3C-SiC nanowires

Recent progress of flexible pressure sensors: from principle, structure to application characteristics

Development of IOT-based low-cost MEMS pressure sensor for groundwater level monitoring

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