Performance Optimization of All-Spin Logic Device Based on Silver Interconnects and Asymmetric Tunneling Layer

Li, Cheng; Cai, Li; Wang, Sen; Yang, Xiaokuo; Cui, Huanqing; Wei, Bo; Dong, Danna; Li, Chuang; Liu, Baojun

doi:10.1109/tmag.2018.2825946

Cited by 8 publications

(5 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, we study the effect of the thermal field on the reversal process. It is of great significance for us to definitely understand the dynamic features of radial vortices, which also provides the possibility for novel spintronic devices [29].…”

Section: Device Architecture and Theoretical Modelmentioning

confidence: 99%

Radial vortex core reversal driven by a spin-polarized current in a nanocontact structure

Dong¹,

Cai²,

Li³

et al. 2019

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

In this paper, we propose a reversal mechanism of magnetic radial vortex core in a Permalloy nanodisk driven by a spin-polarized current injected through a nanocontact. The micromagnetic simulation results indicate that the reversal process of radial vortex core is through the rotation and fusion of an edge soliton pair. Due to the effect of interfacial Dzyaloshinskii-Moriya interaction, the radial chirality and polarity of radial vortex are reversed simultaneously. The transformation is uncovered by detailed studies of magnetization configuration, skyrmion number, energy and effective field. This reversal mechanism of radial vortex differs entirely from the previous mechanisms reported in the literatures. This work not only provides deeper insights into the dynamic properties of magnetic radial vortices, but also has great potential for developing new kinds of spintronic devices using the radial vortices.

show abstract

Section: Device Architecture and Theoretical Modelmentioning

confidence: 99%

Radial vortex core reversal driven by a spin-polarized current in a nanocontact structure

Dong¹,

Cai²,

Li³

et al. 2019

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…But, fortunately, ASLD does not need extra hardware for implementing spin-charge conversion repeatedly, because spin is used at every stage of information processing, transfer, and storage [8]. Thus, ASLD is relatively simpler than other spintronic devices in structure and has been widely studied in the aspects of device switching mechanism [9][10][11], material and structural optimization [12][13][14][15][16][17][18][19][20][21][22][23], and circuit design [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

“…However, due to the dramatically dissipation of spin current in the non-magnetic channel, ALSD needs larger current density to rotate the magnetization of FM. Therefore, to find different channel materials to reduce the dissipation of spin current in the channel has always been a focus of ASLD research [13][14][15][16][17][18]. However, no matter what material is chosen, the spin current will dissipate rapidly in the channel.…”

Section: Introductionmentioning

confidence: 99%

Proposal for a spin logic device based on magneto‐electric effect and spin Hall effect

Wang

Zhang

et al. 2023

Micro & Nano Letters

Self Cite

View full text Add to dashboard Cite

Based on magneto-electric (ME) effect and spin Hall effect (SHE), the authors propose a novel spin logic device named MESH-SLD. In MESH-SLD, the charge current is transmitted in the channel by employing inverse SHE, which solves the dissipation problem of spin current in the channel of all-spin logic device (ASLD). By using a magnetizationdynamics/spin-transport hybrid model, the authors have investigated the influence of working voltage, channel lengths, and materials on the performance of the MESH-SLD. And the simulation results show that the energy dissipation of the MESH-SLD only increases approximately linearly with the increase of channel length, while the switching delay remains almost unchanged. In addition, with the increase of the spin Hall angle of the channel material, the energy dissipation and the minimum working voltage of the MESH-SLD decrease significantly. Most importantly, compared with conventional ASLD, the proposed MESH-SLD improve the switching delay and the energy dissipation by about 2.5 times and 851.8 times, respectively.

show abstract

“…Especially, an all-spin logic device (ASLD) does not need extra hardware to implement spin-to-charge conversion repeatedly, because spin is used at every stage of information processing, transfer, and storage [6,7]. Thus, ASLD has been proposed as a potential beyond-CMOS option for future digital logic application, and has been widely studied in many aspects such as device materials [8][9][10][11][12][13], dimensional size [14][15][16] and logic circuits [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Proposal of a magneto-electric effect assisted all spin logic device

Wang

Zheng

Yang

et al. 2019

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

All spin logic device (ASLD) is a potential beyond-CMOS option for future digital logic application. However, magnetic reversal only using spin transfer torque (STT) in initial device structure degrades its performance. In this paper, we propose a magneto-electric (ME) effect assisted ASLD (ME-ASLD), which significantly shortens the device's switching delay and improves energy efficiency. A magnetization-dynamics/spin-transport hybrid model has been developed for analyzing the operation and performance of the ME-ASLD. The simulation results show that the ME switching delay remains unchanged and the ME energy dissipation decreases linearly with the decreasing of ME layer thickness under the condition of fixed ratio of voltage to thickness, and the magnetization rotation driven by ME effect is more effective than by STT effect. Most importantly, compared with ASLD, the proposed ME-ASLD achieves about 15.3× shorter switching delay and 12.6× lower energy dissipation. Moreover, the ME-ASLD prefers to operate at lower voltage which leads to lower energy-delay product and ultra-low energy dissipation.

show abstract

Performance Optimization of All-Spin Logic Device Based on Silver Interconnects and Asymmetric Tunneling Layer

Cited by 8 publications

References 30 publications

Radial vortex core reversal driven by a spin-polarized current in a nanocontact structure

Radial vortex core reversal driven by a spin-polarized current in a nanocontact structure

Proposal for a spin logic device based on magneto‐electric effect and spin Hall effect

Proposal of a magneto-electric effect assisted all spin logic device

Contact Info

Product

Resources

About