Performance of ZnO-Based Ultraviolet Photodetectors Under Varying Thermal Treatment

Ali, Ghusoon M.; Chakrabarti, P.

doi:10.1109/jphot.2010.2054070

Cited by 42 publications

(30 citation statements)

References 26 publications

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“…Zinc acetate dehydrate (ZnCH 3 (COO) 2 Á2H 2 O) has been used as a starting material to prepare zinc oxide sols for spin coating technique. Zinc acetate dehydrate is a cheap material and has a good solubility in alcohols as compared with alkoxides, such as zinc-n-propoxide [13]. In order to obtain the sols, the precursor zinc acetate dehydrate was first dissolved into isopropanol ((CH 3 ) 2 CHOH) which acts as a solvent and then diethanolamine was added in the solution as a stabilizer.…”

Section: Methodsmentioning

confidence: 99%

“…However, under forward bias condition the barrier height is lowered by 0.7 eV, due to which the EHPs generated in the ZnO layer contribute to the photocurrent in external circuit [19][20][21]. The optical parameters including responsivity (R) and external photodetection efficiency (g ext ) are calculated using the following expressions [13]:…”

Section: Estimation Of Electrical and Photodetection Performancementioning

confidence: 99%

“…Researchers have reportedly used a variety of techniques for growing ZnO nanostructures for fabrication of Schottky contact, MSM, MISIM, heterojunction diodes. The deposition techniques include RF/DC magnetron sputtering, vacuum thermal evaporation deposition techniques [1,2,5,13,14]. Among these techniques, the sol-gel process is by the most convenient one for possible integration of ZnO-based devices onto Silicon wafers containing CMOS integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

“…Foo et al [12] have demonstrated Si/SiO 2 /ZnO nanoparticles based MSM UV photodetector structure using sol-gel spin coating technique and evaluated contrast ratio (photo to dark current ratio) as only 4.82 under 1.16 mW UV light at 5 V bias voltage. Ali and Chakrabarti [13] have abricated and characterized a ZnO thin film based Schottky contact photodetector using sol gal spin coating technique. The device is reported to exhibit a responsivity of 0.2137 A/W and a contrast ratio as 8 at 3 V reverse bias voltage.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode

Singh

Hazra

Tripathi

et al. 2015

J Mater Sci: Mater Electron

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In this paper, fabrication and characterization of a sol-gel derived n-ZnO nanoparticle/p-Si heterojunction diode has been presented. A strong diffraction peak (002) obtained from XRD spectra of sol-gel derived ZnO thin film indicates that the growth of hexagonal wurtzite ZnO nanoparticles are preferably along the c-axis. The surface morphological features extracted from AFM and SEM images predict the uniform growth of ZnO nanoparticles over the p-Si substrate. The optical properties of ZnO nanoparticles have been measured in the spectral range of 300-1000 nm using ellipsometer and photoluminescence spectroscopy. The optical transmittance of ZnO nanoparticles has been observed between 81 and 92.66 % in visible region and the optical band gap has been found out to be 3.24 eV. Finally, metallic contacts were deposited on top of ZnO layer and bottom of Si layer to perform electrical characterization of nanostructured n-ZnO/p-Si heterojunction diodes. Electrical parameters including reverse saturation current, ideality factor, barrier height, rectification ratio have been calculated to explore the potential of the device for futuristic nanoelectronic and optoelectronic device applications.

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Section: Methodsmentioning

confidence: 99%

Section: Estimation Of Electrical and Photodetection Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode

Singh

Hazra

Tripathi

et al. 2015

J Mater Sci: Mater Electron

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show abstract

“…It reveals that the as-deposited AZO film consists of closely packed, granular and hexagonal microcrystalline structures. The microstructure of as deposited film is homogeneous and no defects and visible voids can be seen above the surface of the film [21,22]. The structural scheme of the MSM UV photodetectors based on AZO film is shown in Fig.…”

Section: Characterizationmentioning

confidence: 99%

Fabrication and characterization of Al:ZnO based MSM ultraviolet photodetectors

Singh

Park

2015

Superlattices and Microstructures

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Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

2023

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Visible transparent $$\mathrm{Cu}/\mathrm{n}-\mathrm{ZnO}$$ Cu / n - ZnO and $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}O\left(x=0.14\right) \mathrm{TZO},$$ Cu / Zn 1 - x Sn x O x = 0.14 TZO , Schottky junctions were successfully fabricated on ITO-coated glass substrates via direct current magnetron reactive sputtering method. The structural, morphological, optical, and electrical properties were thoroughly investigated. The polycrystalline nature of the samples was confirmed by XRD studies. FESEM images validate the changes in surface morphology after doping and annealing, and AFM analysis confirmed the variation in surface roughness. The electrical analysis reveals the presence of a Schottky barrier in the fabricated devices. In dark condition, three-order rectification ratio was observed. A two-order increase in leakage current was also observed after illuminating 365 nm UV light of power 60 µW/cm2. The figures of merits of sensors, such as responsivity, detectivity, response speed, and linear dynamic range, were thoroughly investigated. The fabricated sensor had a responsivity of about 07.80 mA/W and a detectivity of 1.39 × 1011 Jones. At zero bias, the sensor also demonstrated a transient photocurrent response of approximately 783 ms for rise and 876 ms for fall. Similarly, 33.70 dB of linear dynamic range was observed. These findings suggests that Cu/TZO Schottky diodes could be useful for self-powered, visible transparent UV photosensors in next-generation optoelectronic devices.

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Performance of ZnO-Based Ultraviolet Photodetectors Under Varying Thermal Treatment

Cited by 42 publications

References 26 publications

Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode

Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode

Fabrication and characterization of Al:ZnO based MSM ultraviolet photodetectors

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

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