Performance of W100−xNx diffusion barriers between 〈Si〉 and Cu

Pokela, P.J.; Kwok, Chee‐Kin; Kolawa, E.; Raud, Sirli; Nicolet, M.‐A.

doi:10.1016/0169-4332(91)90287-t

Cited by 72 publications

(30 citation statements)

References 9 publications

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“…Since the performance of the future IC technology will be limited by the resistance of the metal interconnects [8], copper metallization is emerging as the alternative to aluminum due to its low electrical resistivity (1.72 mV cm), high melting temperature (1084 8C), high electro-migration resistance and also high stress voiding resistance. However to use copper as a interconnect metal, a suitable diffusion barrier is required [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…In order to keep the advantages of scaling technology, the past decade has seen the tremendous efforts in terms of the developing new process technology, materials and their combinations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Since the performance of the future IC technology will be limited by the resistance of the metal interconnects [8], copper metallization is emerging as the alternative to aluminum due to its low electrical resistivity (1.72 mV cm), high melting temperature (1084 8C), high electro-migration resistance and also high stress voiding resistance.…”

Section: Introductionmentioning

confidence: 99%

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Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization

Tripathi

Kumar

2009

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization

Tripathi

Kumar

2009

Applied Surface Science

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“…High nitrogen additions form an amorphous WN structure that increases the stability by increasing the decomposition temperature of a-WN to polycrystalline P-W,N by 50°C. 130 Titanium as a barrier material shows stability in the neighborhood of 400°C. This stability can be improved through nitrogen and oxygen additions.…”

Section: Adhesion Promoters and Diffusion Barriersmentioning

confidence: 99%

Copper metallization for ULSL and beyond

Murarka

Hymes

1995

Critical Reviews in Solid State and Materials Sciences

236

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The investigation of copper for use as an interconnection metal in the ultra large-scale integration (ULSI) era of silicon integrated circuits has accelerated in the past several years. The obvious advantages for using copper to replace currently used Al are related to its lower resistivity (1.7 pR-cm vs. 2.7 @-cm for Al) and its higher electromigration resistance (several orders of magnitude higher compared with Al). The goal of this review is to examine the properties of copper and its applicability as the interconnection metal. A comparison of electromigration behavior of various possible interconnection metal in standard "bulk" state is made. This is followed by a review of the calculations made comparing (a) the RC (resistance x capacitance) time constants of various material systems and (b) the joule heating of the interconnection materials. A comparative study of various metal systems for the application as the interconnect metal is then made. These discussions will clearly establish the superiority of copper over other metals despite certain limitations of copper. We then review the properties, both physical and chemical, and materials science of copper. The concept of using alloys of copper with a minimal sacrifice on resistivity to gain reliability is also discussed. This is followed by the review of the deposition, pattern definition and etching. passivation, need of the diffusion barrier (DB) and adhesion promoter (AP), planarization and dual damascene process using chemical mechanical planarization, and reliability. This review shows that copper will satisfy the needs of the future integrated circuits and provide high performance and reliability as long as we provide an appropriate barrier to diffusion in the underlying devices and the dielectric.

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“…1 Until now, refractory metal nitrides have been generally known as diffusion barriers owing to their high melting points, high thermal stability, and high conductivity. Various refractory metal nitride diffusion barriers, such as Ti-N, [4][5][6] W-N, 7 Zr-N, 8 Ta-N, [9][10][11] and TiZr-N [12][13][14][15] have been widely employed in copper metallization. T. Oku et al 11 firstly examined the evolution of diffusion barriers in copper metallization.…”

Section: Introductionmentioning

confidence: 99%

The evolution of diffusion barriers in copper metallization

Lee

Kuo

2007

JOM

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electrical properties of various diffusion barriers, titanium nitride (TiN), tantalum nitride (TaN), and titanium zirconium nitride (TiZrN), were examined. These diffusion barriers were prepared by reactive magnetron sputtering in N 2 /Ar gas mixtures. Next, barrier performance was evaluated by annealing the Cu/barrier/Si systems at 400-1,000°C for 60 min. in vacuum as well as the measurements of copper diffusion coeffi cients. The results suggest that TiZrN fi lms can be used as a diffusion barrier for copper metallization better than the well-known TaN fi lms. Therefore, the evolution of diffusion barriers in copper metallization, from TiN to TaN and then from TaN to TiZrN, is addressed.

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Performance of W100−xNx diffusion barriers between 〈Si〉 and Cu

Cited by 72 publications

References 9 publications

Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization

Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization

Copper metallization for ULSL and beyond

The evolution of diffusion barriers in copper metallization

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