Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)
DOI: 10.1109/ppc.1999.823632
|View full text |Cite
|
Sign up to set email alerts
|

Performance of pulsed power generator using high voltage static induction thyristor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Publication Types

Select...
3
3

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(2 citation statements)
references
References 5 publications
0
2
0
Order By: Relevance
“…A silicon-controlled rectifier (SCR) was also used to trigger a pseudospark in a KMAX-FRC pulsed power system [6] with an 8 kV trigger voltage and 85 A current with a current rise time of ∼ 2 µs [7]. Other high-voltage pulse forming techniques have also been mentioned [8][9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…A silicon-controlled rectifier (SCR) was also used to trigger a pseudospark in a KMAX-FRC pulsed power system [6] with an 8 kV trigger voltage and 85 A current with a current rise time of ∼ 2 µs [7]. Other high-voltage pulse forming techniques have also been mentioned [8][9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…A 300 M shot durability is one of the desired requirements for a laser IFE system. Solid state pulsed power systems have been built since the late 1970s [16,17], and they utilize high voltage bipolar junction transistors (BJT), insulated gate bipolar transistors (IGBT), metal oxide semiconductor field-effect transistors (MOSFET), siliconcontrolled rectifiers (SCR) and other thyristors [18][19][20][21][22][23][24][25][26][27][28][29][30]. These pulsed power generators are typically used for low energy, high rep-rated laser systems [31,32] and high voltage/low current applications [33,34].…”
Section: Introductionmentioning
confidence: 99%