2008
DOI: 10.1063/1.2918979
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Performance of poly(3-hexylthiophene) organic field-effect transistors on cross-linked poly(4-vinyl phenol) dielectric layer and solvent effects

Abstract: Bottom-contact organic field-effect transistors (OFETs) were fabricated using a polymer gate insulator cross-linked poly(4-vinyl phenol) with regioregular poly(3-hexylthiophene) (RR-P3HT) as an active layer from different organic solvents. With this polymer dielectric, a field-effect mobility of 0.084±0.006cm2V−1s−1 was obtained. Solvents and interfacial properties have pronounced effects in determining the crystallinity and device performance of RR-P3HT on the polymer gate layer. Morphology correlation with t… Show more

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Cited by 42 publications
(26 citation statements)
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“…The same holds for the (010) Bragg reflections which correspond to 0.38 nm (see Table 1). These values agree well with lattice constants of P3HT published by other groups 31, 32, 45…”
Section: Resultssupporting
confidence: 92%
“…The same holds for the (010) Bragg reflections which correspond to 0.38 nm (see Table 1). These values agree well with lattice constants of P3HT published by other groups 31, 32, 45…”
Section: Resultssupporting
confidence: 92%
“…This value is in good agreement with previous investigations. 43,[45][46][47] The FWHM value of 0.63 ± 0.05 is obtained by fitting this Bragg peak and corresponds to the 30 correlation length of 10 ± 0.8 nm in the (100) direction, as determined by using the Scherrer equation. The (100) peak does not change with illumination time, indicating that the P3HT crystalline order is stable with respect to the edge-on orientation in the inverted polymer solar cell during 240 min operating time 35 under solar illumination.…”
Section: Morphology Evolutionmentioning
confidence: 99%
“…where I DS is the drain current, W and L are the channel width and length, respectively, C i is the capacitance per unit area of the gate insulator, V G is the gate voltage, and V T is the threshold voltage. Device II shows a hole mobility of 7.55 × 10 −2 cm 2 V −1 s −1 which approaches the optimum value for pure P3HT based OFETs 43, 44. Device I shows an enhanced hole mobility of 1.54 × 10 −1 cm 2 V −1 s −1 which is about twice of that of device II.…”
Section: Resultsmentioning
confidence: 71%