Abstract:Metal oxide semiconductor (MOS) capacitor is a trilayer device that comprises of metal, dielectric, and semiconductor layer. The advancement of MOS technology has greatly give huge improvement to MOS devices which lead to scaling down the MOS devices. The reduction of dielectric thickness of conventional dielectric material has coming to an end, therefore as alternative new material with high mobility carrier is suggested to overcome the problem. The objectives of this work are to study the performance of MOS … Show more
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