Performance of high resolution visible-InGaAs imager for day/night vision

Enriquez, Marlon; Blessinger, Michael A.; Groppe, Joseph V.; Sudol, Thomas M.; Battaglia, Jesse; Passe, J.; Stern, Mark J.; Onat, Bora M.

doi:10.1117/12.778310

Cited by 18 publications

(7 citation statements)

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“…It can be concluded that compared with other CTIA pixels in Ref. [24][25][26], the proposed digital pixel not only achieves the same performance at each mode, but also is compatible with more application scenarios through our reconfigurable structure.…”

Section: Overall Simulationmentioning

confidence: 73%

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Design of a multi‐mode digital pixel with conversion data protection

Kong

Chang

2022

IET Circuits, Devices & Syst

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With the development of semiconductor technology, digital pixel has received widespread attention and is applied to various electronic products. However, due to the limitation of area, it forms a challenging task to design a digital pixel with multiple modes. In this paper, a pulse width modulation based digital pixel is proposed, which is compatible with five different modes. By using the multi-purpose capacitors and static random access memory structure, it can realise multi-mode conversion in an equivalent area to that of the single mode digital pixel without performance degradation. Furthermore, a corresponding logic control method is developed, such that the integrity of the frame data is ensured during mode conversion. The simulation result of our proposed digital pixel in Tower Jazz 0.18 μm process shows that in the bright field it achieves a dynamic range of 67 dB. In the dark field, it achieves a conversion gain up to 13.91 μV/e−, with input noise of 37.89 e−per pixel after correlated double sampling.

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Section: Overall Simulationmentioning

confidence: 73%

“…Furthermore, the control logic proposed in Ref. [2,14,[22][23][24][25][26][27][28][29] is not suitable for continuous conversion, while the adaptive conversion logic can realise the continuous mode conversion without losing data.…”

Section: Overall Simulationmentioning

confidence: 99%

Design of a multi‐mode digital pixel with conversion data protection

Kong

Chang

2022

IET Circuits, Devices & Syst

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“…In the case of large IR staring-FPAs, straightforward input topologies like source follower per detector (SFD) [31][32][33][34][35], direct injection (DI) [36][37][38][39] and gate modulation input (GMI) [31,40] are still popular because of their compactness and reduced power consumption [19]. Other complex circuit techniques like buffered direct injection (BDI) [36,41] and capacitive transimpedance amplifier (CTIA) [42][43][44]39] offer higher performance by providing excellent bias control, high injection efficiency, linearity and lower noise figures. More recent structures like share-buffered direct injection (SBDI) [45], switched-current integrator (SCI) [46] and buffered gate modulation input (BGMI) [47] are intended to provide better compromise between pixel size constraints and readout performance.…”

Section: Readout Techniquesmentioning

confidence: 99%

Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications

Margarit¹

2017

Springer Theses

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Certifiquen ResumLa present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat.Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació.Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar.L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: viii• Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma.• Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Aquest treball ha cond...

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“…In addition, InGaAs FPA detectors have been widely used in applications in aviation safety, biomedicine, camouflage recognition, night vision, and other fields [3][4][5]. Recently, extensive research has been conducted on the extension of the response spectrum from short wavelength infrared (SWIR) to visible light (VIS) with InP substrate removal [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Because of the high absorption coefficient of n-InP in the visible light band and the different thicknesses of the n-InP contact layer [22], there are different spectral responses of VIS-SWIR InGaAs FPAs, such as 0.7-1.7 µm [6], 0.5-1.7 µm [7][8][9][10][11][12][13][14][15][16][17], and 0.4-1.7 µm [18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Ultra-Broadband Ultraviolet–Visible Light–Short Wavelength Infrared InGaAs Focal Plane Arrays via n-InP Contact Layer Removal

Zhang,

Wang,

et al. 2024

Sensors

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PIN InGaAs short wavelength infrared (SWIR) focal plane array (FPA) detectors have attracted extensive attention due to their high detectivity, high quantum efficiency, room temperature operation, low dark current, and good radiation resistance. Furthermore, InGaAs FPA detectors have wide applications in many fields, such as aviation safety, biomedicine, camouflage recognition, and infrared night vision. Recently, extensive research has been conducted on the extension of the response spectrum from short wavelength infrared (SWIR) to visible light (VIS) through InP substrate removal and reserving the n-InP contact layer. However, there is little research on the absorption of InGaAs detectors in the ultraviolet (UV) band. In this paper, we present an ultra-broadband UV–VIS–SWIR 640 × 512 15 μm InGaAs FPA detector by removing the n-InP contact layer in the active area and reserving the InP contact layer around the pixels for n contact, creating incident light to be directly absorbed by the In0.53Ga0.47As absorption layer. In addition, the optical absorption characteristics of InGaAs infrared detectors with and without an n-InP contact layer are studied theoretically. The test results show that the spectral response is extended to the range of 200–1700 nm. The quantum efficiency is higher than 45% over a broad wavelength range of 300–1650 nm. The operability is up to 99.98%, and the responsivity non-uniformity is 3.28%. The imaging capability of InGaAs FPAs without the n-InP contact layer has also been demonstrated, which proves the feasibility of simultaneous detection for these three bands.

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Performance of high resolution visible-InGaAs imager for day/night vision

Cited by 18 publications

References 1 publication

Design of a multi‐mode digital pixel with conversion data protection

Design of a multi‐mode digital pixel with conversion data protection

Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications

Ultra-Broadband Ultraviolet–Visible Light–Short Wavelength Infrared InGaAs Focal Plane Arrays via n-InP Contact Layer Removal

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