Performance of GaAs MESFET's at Low Temperatures (Short Papers)

Liechti, C.A.; Larrick, Rick

doi:10.1109/tmtt.1976.1128858

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Introduction1

Small-signal Equivalent Circuit and Noise Properties1

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1979

1990

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Cited by 31 publications

(2 citation statements)

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“…Values of T,/f achieved with different types of cooled FETs are 17 K/0.3 GHz, 1 93 K/1.5 GHz, 2 30 K/4 GHz, 3 and 130 K/12 GHz. 4 With the inexpensive transistor used by us (Plesseys GAT 1) a typical performance figure was 80 K/0.5 GHz; similar values for the same FET have been obtained by others. 1,5 The feasibility of using cooled GaAs-FET amplifiers with SQUIDs was first demonstrated by Gaerttner.…”

Section: Introductionsupporting

confidence: 77%

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Cryogenic GaAs-FET amplifiers for SQUIDS

et al. 1979

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Section: Introductionsupporting

confidence: 77%

“…For the simplest ease, that of an open input (il = 0), it becomes arp in parallel with R,. In practice one requires that arp <-c~Rt (4) This is the condition for getting a so-called triangular pattern without truncation of the triangles.…”

Section: Small-signal Equivalent Circuit and Noise Propertiesmentioning

confidence: 99%