Performance of GaAs MESFET Mixers at X Band

Pucel, R.A.; Masse, D.; Bera, Rajesh

doi:10.1109/tmtt.1976.1128854

Cited by 111 publications

(22 citation statements)

References 4 publications

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“…In active gate mixers [5], the device is biased in the saturation region. The local oscillator (LO) signal is applied at the gate terminal to produce a periodic variation in the device transconductance, which allows frequency conversion of an RF excitation from gate to drain side [see Fig.…”

Section: A Fet-based Conjugating Cellmentioning

confidence: 99%

A PHEMT-Based Phase Conjugator for Full-Duplex Retrodirective Arrays

Cabria

Garcia

2008

IEEE Microw. Wireless Compon. Lett.

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In this letter, a phase conjugator for full-duplex retrodirective arrays is presented. Properly controlling a PHEMT nonlinear behavior, the modulation of the phase conjugated retransmitted signal is assured without distorting the information contained in the amplified version of the received signal. By means of a balanced architecture, the interrogating and response components are obtained through two mutually isolated output ports, respectively connected to the demodulation unit and the orthogonal feed of the employed aperture coupled patch. Measured results demonstrate the phase conjugator performance in two operating modes: retransmission of a BPSK signal after reception of an amplitude modulated interrogation, or ASK response when the incoming excitation is angularly modulated.

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Section: A Fet-based Conjugating Cellmentioning

confidence: 99%

A PHEMT-Based Phase Conjugator for Full-Duplex Retrodirective Arrays

Cabria

Garcia

2008

IEEE Microw. Wireless Compon. Lett.

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“…We have selected the technique consuming the smallest cbip area for monolithic implementation. Measured results are presented for this circuit which measures only 1.4mm x 1.3mm.…”

Section: Introductionmentioning

confidence: 99%

Novel techniques for obtaining high isolations in practical microwave FET MMIC mixers

Baree

Robertson

1995

25th European Microwave Conference, 1995

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This paper presents novel techniques for obtaining high RF/LOto IF isolations in microwave mixers without the need for output filtering. Two techniques are described which essentially involve feeding some of the input LO and RF signals forward to cancel out with the LO and RF signals appearing at the output. The first technique involves using a single MESFET as the mixer element, and relies on the LO to RF leakage of ihe mixer to obtain the required signal for cancellation. The second technique involves a cascode connectioL of two MESFETs to mimic the dual-gate mixer, with the LO and RF signals tapped-off at the input separately, and then applied at the output by accordingly inverting and amplifying to allow cancellation of the RF and I ,O. Due primarily to cost considerations, the first technique was chosen for implementation as this consumed the minimum circuit area. The MMIC demonstrator chip, which measures only 1.4mm x 1.3mm, has achieved measured results exhibiting over 30dB of RF/LOto IF isolations between r-1 8GHz.

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“…The rapid advancement of GaAs MESFET technology, however, opened the door to a new type of MESFET-based mixers which combine effective conversion gain, self oscillating option, compatibility with GaAs monolithic technology and inherent isolation between input and output ports (without the use of additional filters). While experimental data on MESFET mixers is available and many results have been achieved and reported in the literature, very little has been published so far on theoretical methods for MESFET mixer analysis [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

New method for the analysis of dual-gate MESFET mixers

Dreifuss¹,

Madjar²,

Bar‐Lev

1987

IEE Proc. H Microw. Antennas Propag. UK

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A method for the analysis of a microwave mixer based on a dual-gate MESFET is presented. The method extends a previously published analysis technique for a single-gate MESFET mixer by treating the circuit as a threeport network. The device is described by a complete mathematical model and the harmonic balance technique is utilised for the large-signal analysis stage. This results in a relatively fast program. The method is demonstrated by applying it to the simulation of a mixer based on a Raytheon transistor RDX832 for which device data was available. The mixer was constructed and its experimentally obtained performance results show good agreement between the simulated and the measured conversion gain values through a wide range of local-oscillator input power.

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Performance of GaAs MESFET Mixers at X Band

Cited by 111 publications

References 4 publications

A PHEMT-Based Phase Conjugator for Full-Duplex Retrodirective Arrays

A PHEMT-Based Phase Conjugator for Full-Duplex Retrodirective Arrays

Novel techniques for obtaining high isolations in practical microwave FET MMIC mixers

New method for the analysis of dual-gate MESFET mixers

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