1974
DOI: 10.1109/tns.1974.6498911
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Performance of Ga1−xAlxAs light emitting diodes in radiation environments

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Cited by 19 publications
(2 citation statements)
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“…Several studies [32][33][34][35][36][37][38][39][40] have shown that radiation-induced displacement damage in the semiconductor lattice 01' the active, light-producing region in LEDs and ILDs is the most serious effect of a typical mixed radiation environment. The key to understanding the detrimental effects of lattice damage on the performance of LEDs lies in an examination of the operating mechanisms of these devices.…”
Section: Leds and Laser Diodesmentioning
confidence: 99%
“…Several studies [32][33][34][35][36][37][38][39][40] have shown that radiation-induced displacement damage in the semiconductor lattice 01' the active, light-producing region in LEDs and ILDs is the most serious effect of a typical mixed radiation environment. The key to understanding the detrimental effects of lattice damage on the performance of LEDs lies in an examination of the operating mechanisms of these devices.…”
Section: Leds and Laser Diodesmentioning
confidence: 99%
“…This last value is compatible with that from [61: about 300 dB/km obtained with a much higher dose-rate of 7200 kGy h1. The gamma-ray tolerance in 820-900 nm-wavelength fiber optic systems is mainly determined by light output degradation of Al Ga As LEDs [8,9]. Presently not many results were published for 1.3 j.m-LEDs.…”
Section: Fiber For Pigtailed Componentsmentioning
confidence: 99%