Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers and High-Speed Modulators

Liechti, C.A.

doi:10.1109/tmtt.1975.1128602

Cited by 81 publications

(9 citation statements)

References 21 publications

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“…For frequencies higher than a few GHz, the best photodetector devices are p-i-n or Schottky diodes or ITO photodiodes combined with MESFET devices used as a preamplifier in built-in monolithic optoelectronics integrated circuit (OEIC). The gain and noise performance of single-gate GaAs MESFET's have been extensively characterized and the MESFET potential in low noise amplifiers has been clearly demonstrated [14]. The advantage of MESFET using a preamplifier is low noise performance and extremely low gate-to-source capacitance.…”

Section: Introductionmentioning

confidence: 99%

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Chattopadhyay¹,

Overton²,

Vetter³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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Abstract-An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Chattopadhyay¹,

Overton²,

Vetter³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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“…These two parameters can be expressed in terms of S-parameters as given in Liechti (1975) and Asai (1975).…”

Section: Results and Illustrationsmentioning

confidence: 99%

“…Among these applications, we cite the most useful examples: Gain controlled amplifiers, active phase-shifters, stabilized oscillators, mixers, and frequency doublers (Liechti, 1975;Asai, 1975;Albinsson et al, 1988;Tsironis & Meierer, 1982;Tsironis, 1980;Stancliff, 1981). Albinsson et al (1988) have presented a new phaseshifter, the configuration of which is based on DGMESFET special properties.…”

Section: Introductionmentioning

confidence: 99%

The Design of the Traveling-Wave Dual-Gate MESFET

Kaddour

Gharbi

Baudrand³

2006

Electromagnetics

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An accurate method is presented to the analysis of the dual gate field effect transistor DGMESFET, taking into account the wave propagation phenomenon. For this, an analytical model is proposed to determine the characteristics of the DGMESFET, such as the S-parameters and gain. The results of this simulation are compared with the published experimental data. In this case a good agreement is obtained.

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“…The major difficulty concerns the de%irmination of the optimal load to apply on gate 2 in order to obtain a flat frequency response for a dynamic range as large as possible (3).…”

Section: Variable Gain Amplifier Designmentioning

confidence: 99%

A Very Flat Variable Gain Amplifier MMIC for C-Band Satellite Receiver

Roques¹,

Cazaux²,

Pouysegur³

et al. 1989

1989 19th European Microwave Conference

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This paper describes the design, the realization, and the performance of two versions of an analog C-band GaAs variable gain amplifier module suitable to application in C-band satellite receiver. This modules uses the ability of the Dual-Gate MESFET to provide variable gain. The highest obtained dynamic control range is 30 dB with very flat gain response within 3-5 GHz frequency range. Input and output return losses are always better than 15 dB and the phase variation versus gain lower than 10 degrees over a 20 dB gain/attenuation range. Two wafers of both versions were processed by THOMSON/DAG GaAs foundry using a 0.5 pm gate length technology. The overall manufacturing RF-yields are 45 % and 60 % for the two versions presented.

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Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers and High-Speed Modulators

Cited by 81 publications

References 21 publications

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

The Design of the Traveling-Wave Dual-Gate MESFET

A Very Flat Variable Gain Amplifier MMIC for C-Band Satellite Receiver

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