Performance of beta tool for low-energy electron-beam proximity-projection lithography (LEEPL)

Abstract

The two LEEPL beta-tools were completed in earlier 2002 and have been evaluated for the performance. 5Onm CH patterns and 7Onm L/S patterns are attained and the CD uniformity of 7Onm L/S patterns with 37shots on a 200mm wafer is under 4nm (3) with the LEEPL beta-tools. In addition, it is proved that the fine tuning deflector can correct a mask and a wafer distortion by giving a minute angle to the electron beam. The mask distortion with respect to orthogonality and magnification is decreased on a wafer by 1/5. By means of this fine tuning deflector, Mix & Match accuracy with any other lithography tools will be better and difficulty of lx stencil mask fabrication will be easier. Referring to the data which has been obtained with the evaluation of the LEEPL beta-tools, the first LEEPL production tool dubbed "LEEPL-3000" is under construction to realize the satisfactory ability for 65nm node device fabrication. The shipping of the first LEEPL-3000 is scheduled in earlier 2003 and it is earlier than any other Next Generation Lithography technologies.

Electron beam nanolithography and testing: ways of increasing the resolution and the throughput

“…Though the technology LEEPL has appeared recently, the basic problems, connected to the manufacturing 1х stencil masks and technology of very thin resist processes, have solved. Already the first tool of such type -"LEEPL-3000" is made 17 . The system has the resolution 65 nm, exposure field of 46х46 mm, and allows exposure up to 50 wafers of diameter 200 mm or 40 wafers 300 mm in diameter per an hour respectively.…”