Performance Investigation of Novel Pt/Pd-SiO<sub>2</sub> Junctionless FinFET as a High Sensitive Hydrogen Gas Sensor for Industrial Applications

Sehgal, Himani Dua; Pratap, Yogesh; Gupta, Mridula; Kabra, Sneha

doi:10.1109/jsen.2021.3067801

Cited by 21 publications

(13 citation statements)

References 30 publications

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“…Also, since rhodium has the lowest work function, results in lower electron velocity than other catalytic gate metals. 34 The channel potential on the surface contour in On-state (V ds = V gs = 1.0 V) is depicted in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

“…36 I on /I off sensitivity.-The I On /I Off ratio represents the ratio of the on-state current (I On ) to the off-state current (I Off ) for a proposed structure which is a measure of the device's ability to switch between the on and off states efficiently. 22 For any semiconductor 34 More band bending is caused by this overlap at the channel-drain junction region, which helps the movement towards the drain region of charge-carriers. 34 As a result, both Off-current and the On-curve values rises.…”

Section: Sub Dsmentioning

confidence: 99%

“…22 For any semiconductor 34 More band bending is caused by this overlap at the channel-drain junction region, which helps the movement towards the drain region of charge-carriers. 34 As a result, both Off-current and the On-curve values rises. For each catalytic metal, the overall ratio of I On /I Off consequently rises.…”

Section: Sub Dsmentioning

confidence: 99%

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Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Neeraj,

Sharma,

Goel

et al. 2024

ECS J. Solid State Sci. Technol.

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A stack-engineered junctionless accumulation nanowire FET (SE-JAM-NW FET) is proposed for low-power and high-sensitivity phosphine (PH3) gas detection applications. Compared to a standard nanowire field-effect transistor, SE-JAM-NW FET is used at nanoscale dimensions because of its inherent benefits, including low cost, improved portability, low Off- state current, and increased On-state current with low power consumption. To implement SE-JAM-NW FET as a phosphine gas sensor, four catalytic metals, Platinum (Pt), Rhodium (Rh), Iridium (Ir), and Palladium (Pd) have been employed as gate electrodes. In designing a gas sensor, various electric parameters like potential, electron concentration, recombination rate, and electron velocity were evaluated for PH3 gas detection. To forecast the sensor's response, analog characteristics like change in drain current, transconductance, and output conductance were simulated for different catalytic metal work functions (200, 150, 100, and 50 meV) at the gate electrode. The variation in On-state current to Off-state current ratio (IOn/IOff), On-state current (IOn), and subthreshold leakage current (IOff) for sensing gas molecules have been used to quantify sensitivity. Effects of silicon pillar-based radius variation and channel length variation on the sensitivity-based parameters were also investigated. Each catalytic metal exhibits improved sensitivity with increased channel length and decreased radius.

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Section: Resultsmentioning

confidence: 99%

Section: Sub Dsmentioning

confidence: 99%

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Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Neeraj,

Sharma,

Goel

et al. 2024

ECS J. Solid State Sci. Technol.

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“…Subsequently, the nanostructured MOSFET has emerged as a highly potential candidate for electrochemical gas sensing applications, which are further advantageous for their inherently higher channel surface-to-volume ratio. However, only a few reports have attempted to design CMG-NWFETs and CMG-FinFET for gas-sensing applications, which in general demonstrated the suitability of nanostructure CMG-FETs over their bulk CMG-MOSFET counterparts [10][11][12][13] . In this context, ultra-thin 2D nanomaterials like Molybdenum Disulfide (MoS2) have recently been considered for CMG-FET design [14] .…”

Section: Introductionmentioning

confidence: 99%

Catalytic Metal‐Gated Nano‐Sheet Field Effect Transistor and Nano‐Sheet Tunnel Field Effect Transistor Based Hydrogen Gas Sensor‐ A Design Perspective

Bansal,

Tiwari,

Majumdar

et al. 2024

Advcd Theory and Sims

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In this work, for the first time, the catalytic metal gate (CMG) based nanosheet Field Effect Transistor (NSFET) and nanosheet Tunnel Field Effect Transistor (NSTFET) are proposed for nano‐scale device dimensions, and the different design aspects of catalytic metal gate (CMG)‐based transduction for Hydrogen (H2) sensing are extensively investigated using numerical device simulation. The influence of applied biasing conditions and structural parameter specifications on the sensing performance of CMG‐NSFET and CMG‐NSTFET are methodically analyzed from device electrostatics and carrier transport mechanisms. Furthermore, the relative maximum sensitivity variations with H2‐partial pressure, ambient temperature, and the presence of ambient Oxygen are comprehensively studied. The study reveals that compared to CMG‐NSFET, the CMG‐NSTFET demonstrates a high immunity against bias and doping variations, with a notably higher (> 50%) sensitivity within low H2 partial pressures (10−15 – 10−10 Torr). Next, the sensing performance of CMG‐NSTFET is systematically optimized through a band‐gap and gate‐stack engineering approach, leading to a 180% to 650% sensitivity improvement from lower (10−15 Torr) to higher (10−5 Torr) range of H2 partial pressure. Finally, the performance of optimized CMG‐NSFET and CMG‐NSTFET are extensively benchmarked against other reported nanostructured CMG‐FET and TFET‐based H2 gas sensors, exhibiting a notably higher sensitivity in the proposed sensors.

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“…On the other side, a high operating temperature is required to activate gas sensing sites ( Huang et al, 2011 ; Wang et al, 2014 ), eliminating the possibility of being integrated with IC circuits or other flexible substrates. In addition, the introduction of noble metal maintaining the catalytic characteristics with electronic sensitization, where the MOS materials decorated noble metals have been used to improve the gas sensitivity at room temperature ( Majhi et al, 2015 ; Yu et al, 2017 ; Sehgal et al, 2021 ). In this sequence, the integration of metal-MOSs materials have been a remarkable candidate for gas sensing in the last decade; however, they still suffer low sensing performance towards small-concentration (ppm level) VOCs ( Li et al, 2015 ).…”

Section: Introductionmentioning

confidence: 99%

A p-n Heterojunction Based Pd/PdO@ZnO Organic Frameworks for High-Sensitivity Room-Temperature Formaldehyde Gas Sensor

et al. 2021

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As formaldehyde is an extremely toxic volatile organic pollutant, a highly sensitive and selective gas sensor for low-concentration formaldehyde monitoring is of great importance. Herein, metal-organic framework (MOF) derived Pd/PdO@ZnO porous nanostructures were synthesized through hydrothermal method followed by calcination processes. Specifically, porous Pd/PdO@ZnO nanomaterials with large surfaces were synthesized using MOFs as sacrificial templates. During the calcination procedure, an optimized temperature of 500°C was used to form a stable structure. More importantly, intensive PdO@ZnO inside the material and composite interface provides lots of p-n heterojunction to efficiently manipulate room temperature sensing performance. As the height of the energy barrier at the junction of PdO@ZnO exponentially influences the sensor resistance, the Pd/PdO@ZnO nanomaterials exhibit high sensitivity (38.57% for 100 ppm) at room temperature for 1-ppm formaldehyde with satisfactory selectivity towards (ammonia, acetone, methanol, and IPA). Besides, due to the catalytic effect of Pd and PdO, the adsorption and desorption of the gas molecules are accelerated, and the response and recovery time is as small as 256 and 264 s, respectively. Therefore, this MOF-driven strategy can prepare metal oxide composites with high surface area, well-defined morphology, and satisfactory room-temperature formaldehyde gas sensing performance for indoor air quality control.

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Performance Investigation of Novel Pt/Pd-SiO₂ Junctionless FinFET as a High Sensitive Hydrogen Gas Sensor for Industrial Applications

Cited by 21 publications

References 30 publications

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Catalytic Metal‐Gated Nano‐Sheet Field Effect Transistor and Nano‐Sheet Tunnel Field Effect Transistor Based Hydrogen Gas Sensor‐ A Design Perspective

A p-n Heterojunction Based Pd/PdO@ZnO Organic Frameworks for High-Sensitivity Room-Temperature Formaldehyde Gas Sensor

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Performance Investigation of Novel Pt/Pd-SiO2 Junctionless FinFET as a High Sensitive Hydrogen Gas Sensor for Industrial Applications

Cited by 21 publications

References 30 publications

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH3 Gas Detector

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH3 Gas Detector

Catalytic Metal‐Gated Nano‐Sheet Field Effect Transistor and Nano‐Sheet Tunnel Field Effect Transistor Based Hydrogen Gas Sensor‐ A Design Perspective

A p-n Heterojunction Based Pd/PdO@ZnO Organic Frameworks for High-Sensitivity Room-Temperature Formaldehyde Gas Sensor

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Performance Investigation of Novel Pt/Pd-SiO₂ Junctionless FinFET as a High Sensitive Hydrogen Gas Sensor for Industrial Applications

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector