Performance Investigation of Dual Trench Split-Control-Gate MOSFET as Hydrogen Gas Sensor: A Catalytic Metal Gate Approach

Ghosh, Rittik

doi:10.1109/lsens.2023.3272394

Cited by 9 publications

(5 citation statements)

References 19 publications

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“…The working principle of the proposed sensor is based on the gas-induced modulation in metal gate work function [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ]. Our proposed design can detect two different types of gases by recording a change in p-type (in the case of the first gas type) and n-type (in the case of the second gas type) conduction branches.…”

Section: Nanosensor Structure and Multi-gas Sensing Principlementioning

confidence: 99%

“…This coupled matrix calculation stops by a self-consistency in terms of the current and previous potential profile [42]. Then the nanodevice characteris- The working principle of the proposed sensor is based on the gas-induced modulation in metal gate work function [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. Our proposed design can detect two different types of gases by recording a change in p-type (in the case of the first gas type) and n-type (in the case of the second gas type) conduction branches.…”

Section: Quantum Simulation Approachmentioning

confidence: 99%

“…Particularly, gas-induced gate work function (WF) modulation in FETs-based gas sensors has proven to be an effective, non-destructive, complementary metal-oxide-semiconductor (CMOS)-compatible, and high-performance approach for gas sensing applications [ 11 , 12 , 13 , 14 , 15 ]. Its adaptability across a range of field-effect transistor sizes, from micro-scale to nanoscale, makes it versatile and attractive [ 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. In fact, enhancing the performance of FET-based gas sensors with sensitive gates can be achieved through two primary approaches.…”

Section: Introductionmentioning

confidence: 99%

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Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Tamersit,

Kouzou,

Rodriguez

et al. 2024

Nanomaterials

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In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solutions of the mode space non-equilibrium Green’s function (NEGF) formalism coupled with the Poisson’s equation considering ballistic transport conditions. The proposed multi-gas nanosensor is endowed with two top gates ensuring both reservoirs’ doping and multi-gas sensing. The investigations have included the IDS-VGS transfer characteristics, the gas-induced electrostatic modulations, subthreshold swing, and sensitivity. The order of change in drain current has been considered as a sensitivity metric. The underlying physics of the proposed JLGNR TFET-based multi-gas nanosensor has also been studied through the analysis of the band diagrams behavior and the energy-position-resolved current spectrum. It has been found that the gas-induced work function modulation of the source (drain) gate affects the n-type (p-type) conduction branch by modulating the band-to-band tunneling (BTBT) while the p-type (n-type) conduction branch still unaffected forming a kind of high selectivity from operating regime point of view. The high sensitivity has been recorded in subthermionic subthreshold swing (SS < 60 mV/dec) regime considering small gas-induced gate work function modulation. In addition, advanced simulations have been performed for the detection of two different types of gases separately and simultaneously, where high-performance has been recorded in terms of sensitivity, selectivity, and electrical behavior. The proposed detection approach, which is viable, innovative, simple, and efficient, can be applied using other types of junctionless tunneling field-effect transistors with emerging channel nanomaterials such as the transition metal dichalcogenides materials. The proposed JLGNRTFET-based multi-gas nanosensor is not limited to two specific gases but can also detect other gases by employing appropriate gate materials in terms of selectivity.

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Section: Nanosensor Structure and Multi-gas Sensing Principlementioning

confidence: 99%

Section: Quantum Simulation Approachmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Tamersit,

Kouzou,

Rodriguez

et al. 2024

Nanomaterials

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“…9(a), (b), and (c) respectively. It can be observed that the TPCs rise as the device turns ON and more so at 50 K [23][24]. Another vital radio-frequency (RF) metric is the FET cut-off frequency or transit frequency (Ftransit) that is determined by equation ( 2) at unit small signal current-gain [25][26].…”

Section: Impact Of Dct On Rf Metricsmentioning

confidence: 99%

Impact of Deep Cryogenic Temperatures on High-k Stacked Dual Gate Junctionless MOSFET Performance: Analog and RF analysis

Ghosh

Nelapati

2023

Preprint

Self Cite

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This article presents the reliability analysis of a High-k stacked Dual Gate Junction-less MOSFET at Deep Cryogenic Temperatures (as low as 50 Kelvin) in terms of dc, analog and RF stability performance metrics. Furthermore, the dc and analog figure of merits in the presence polarized interface trap charge densities has been analyzed at sub-ambient temperatures. The steep ON-OFF switching and the sub-threshold slope profile shows heavy reliance on temperature variations and confirm that the transistor electrostatics improve at lower temperatures. The study reveals the compatibility of the device to perform at cryogenic temperatures and can be integrated with CMOS technology for quantum computations.

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“…In recent times, the extensive use of hydrogen and oxygen has made it essential to monitor and control their concentration in many areas, including military, environmental monitoring, and medical industries. In literature, [1][2][3][4] CMOScompatible MOSFET-based gas sensors have been widely used as they provide high sensitivity, are inexpensive, low power, and have compact designs. The sensitivity of MOSFET based gas sensors can be improved by device level design optimization of transistors.…”

Section: Introductionmentioning

confidence: 99%

A highly sensitive MOSFET gas sensor based on charge plasma and catalytic metal gate

Dewangan,

Rajan,

Panchore

et al. 2023

Int J Numerical Modelling

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This manuscript presents, for the first time, a catalytic metal gate‐based charge plasma (CP) MOSFET with improved sensitivity for gas detection applications. In this design, CP refers to the source and drain boundaries being marked by depositing metal electrodes with appropriate work function over the intrinsic silicon film. To sense hydrogen and oxygen gases, palladium (Pd) and silver (Ag) metals are respectively deposited as gate electrodes on P‐CP‐MOSFET and N‐CP‐MOSFET. Further, sensitivity of CP‐MOSFET sensor is determined as if gas molecules are present and the results have been evaluated in comparison with the sensitivity of conventional gas sensor using bulk MOSFET in ATLAS TCAD device simulator. The effect of process variations on sensitivity has also been compared for both devices. The proposed device resolves fabrication complexity issues and offers better sensitivity.

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Performance Investigation of Dual Trench Split-Control-Gate MOSFET as Hydrogen Gas Sensor: A Catalytic Metal Gate Approach

Cited by 9 publications

References 19 publications

Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Impact of Deep Cryogenic Temperatures on High-k Stacked Dual Gate Junctionless MOSFET Performance: Analog and RF analysis

A highly sensitive MOSFET gas sensor based on charge plasma and catalytic metal gate

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