Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

Abstract

In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed .Use of smart material Carbon nanotubes ( CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication . The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS . Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

A Flexible Pressure Sensor Based on Graphene/Epoxy Resin Composite Film and Screen Printing Process

“…Then, the vibration exciter applies the dynamic load to the sensor to realize the force value and frequency control of the load. Sensitivity is an important performance index of pressure-sensitive sensors that reflects the output change caused by the unit input [51]. The sensor's sensitivity (S) calculation method is shown in Equation ( 1), where ∆I is the absolute value of the current change, I 0 is the initial value of the current, and P is the external pressure imposed on the sensor.…”

Accurate Nonlinearity and Temperature Compensation Method for Piezoresistive Pressure Sensors Based on Data Generation

“…The kernel ELM is an extension of the ELM [28] that further improves its generalization ability using a Mercer kernel, such as the Gaussian kernel. If we define the kernel matrix Ω = GG T , with Ω i,j = g(x i )•g x j T = κ x i , x j , then (11) can be written as follows:…”

“…Hardware self-compensation approaches mitigate temperature drift and nonlinearity error primarily through built-in analog circuits [9][10][11], which are easy to implement and offer good real-time performance. But the built-in circuits are also susceptible to temperature changes, which limits the sensor accuracy.…”