Performance Investigation and Optimization of 2-D Material based Double Gate Tunneling Field-Effect Transistor (DG-TFET)

Paul, Robi

doi:10.1109/icaeee54957.2022.9836370

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…Figure 4(a) holds the effects of the dielectric modulations over the energy band of the device. In every situation, the V gs (6)…”

Section: Effects Of Dielectric Constant Variationmentioning

confidence: 99%

“…However, the theoretical limit of the subthreshold swing to 60mv/Dec [4], the incompetence of measuring neutral bio-molecules, and considerably greater power consumption due to the thermionic emission of carriers have led researchers to shift their focus on new FET-based biosensors [5]. Among these, TFET stands out as an admirable device due to its lower subthreshold slope, and comparatively lower OFF current [6]. But one of the significant drawbacks of TFET design is its lower ON-current.…”

Section: Introductionmentioning

confidence: 99%

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Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

Paul

2022

Silicon

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Conventional biosensor designs are often vulnerable to issues like random dopant fluctuations (RDFs) and high thermal budgets due to their design and the device they are based on. The main reason behind such issues is the complexity of maintaining uniform doping levels throughout the device structure. This manuscript investigates a biosensor structure utilizing a dual pocket junctionless SiGe-Heterostructured TFET design to overcome such shortcomings. The implementation of the doping charge plasma technique with the uniform doping of along an integrated SiGe-Heterostructure layer has improved the tunneling process while also effectively eliminating issues like random dopant fluctuations (RDF). Again the overall performance also depends on the sensitivity of the sensor design. Increasing the trapping area for biomolecules at the same technological node by increasing the pocket length or by adding a pocket region leads to rapid changes in the sensor’s electric properties owing to shifting dielectric constants (k) and charge densities (in both positive and negative situations), improving in the overall detection process. The influence of these parameters on the device’s Drain current, Surface Potential, Electron Tunneling Rate (ETR), Subthreshold Swing (SS), and I on /I off ratio is also explored. The introduction of the added pocket region gives us scalability while also showing a higher sensitivity of for a dielectric constant being 12 and neutrally charged while rising to nearly if the molecules are positively charged. With the improvement in drain current sensitivity due to the additional pocket and junctionless design, this work will undoubtedly give researchers a roadmap for the future generation of highly sensitive biosensor alternatives.

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“…Figure 4(a) holds the effects of the dielectric modulations over the energy band of the device. In every situation, the V gs (6)…”

Section: Effects Of Dielectric Constant Variationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

Paul

2022

Silicon

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Design and Comparison of Various Parameters of T-Shaped TFET of Variable Gate Lengths and Materials

Upadhyay,

Chaudhary,

Sunkaria

et al. 2024

Lecture Notes in Networks and Systems

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Design and Performance Investigation of SiGe Heterojunction Based Vertical Dual Pocket Biosensor Design Based on Charge Plasma TFET

Paul

2023

2023 IEEE 8th International Conference for Convergence in Technology (I2CT)

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Performance Investigation and Optimization of 2-D Material based Double Gate Tunneling Field-Effect Transistor (DG-TFET)

Cited by 3 publications

References 16 publications

Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

Design and Comparison of Various Parameters of T-Shaped TFET of Variable Gate Lengths and Materials

Design and Performance Investigation of SiGe Heterojunction Based Vertical Dual Pocket Biosensor Design Based on Charge Plasma TFET

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