Performance investigation and impact of trap charges on novel lateral dual gate oxide-bilateral tunnelling based field effect transistor

Kwatra, Priyanka; Singh, Sajai Vir; Nigam, Kaushal

doi:10.1016/j.microrel.2022.114872

Microelectronics Reliability

2023

DOI: 10.1016/j.microrel.2022.114872

|View full text |Cite

Performance investigation and impact of trap charges on novel lateral dual gate oxide-bilateral tunnelling based field effect transistor

Priyanka Kwatra

Sajai Vir Singh

Kaushal Nigam

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

2024

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 6 publications

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications

Anusuya,

Kumar

2024

Multiscale and Multidiscip. Model. Exp. and Des.

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Performance investigation and impact of trap charges on novel lateral dual gate oxide-bilateral tunnelling based field effect transistor

Cited by 6 publications

References 35 publications

Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications

Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications

Design and analysis of novel bilateral tunnelling based tunnel FET considering workfunction engineered metal strip for enhanced performance

Unveiling the influence of temperature and interface traps on the performance of source-all-around vertical TFET

Contact Info

Product

Resources

About