Performance improvement of Y-doped VO<sub>x</sub> microbolometers with nanomesh antireflection layer

Yeh, Tsu F.; Tsai, Cheng Kang; Chu, Shao Yu; Lee, Hsin Ying; Lee, Ching-Ting

doi:10.1364/oe.386438

Cited by 13 publications

(7 citation statements)

References 34 publications

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“…The D* value of visible to NIR wavelengths is greater than 1.79 × 10 9 Jones, both in air and under vacuum. Especially under vacuum, the D* value under 1550 nm is 6.02 × 10 9 Jones, which is higher than 6 × 10 8 Jones for a α-Si type bolometer and 2.20 × 10 8 Jones for a reported VO x type bolometer …”

Section: Resultsmentioning

confidence: 72%

“…On the whole, in comparison with the novel bolometer materials in Table S1, VO 2 (B) shows superior TCR and a low noise level, leading to a significantly enhanced D* value. It is not only superior to existing bolometers , but also comparable to the state of the art ultra-broad-band photodetectors from the visible to the terahertz region (Table ). Our result shows the 2D metallic metal oxide is competitive in ultra-broad-band photodetection.…”

Section: Resultsmentioning

confidence: 90%

“…Especially under vacuum, the D* value under 1550 nm is 6.02 × 10 9 Jones, which is higher than 6 × 10 8 Jones for a α-Si type bolometer 38 and 2.20 × 10 8 Jones for a reported VO x type bolometer. 39 In order to reveal the photoresponse mechanism of the VO 2 (B) photodetector, the photocurrent distribution was imaged using scanning photocurrent microscopy. Under irradiation with 0 V bias, red and blue areas, corresponding to currents with opposite directions, appear at two VO 2 (B)/Au contacts, as shown in Figure 4a.…”

Section: Resultsmentioning

confidence: 99%

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Highly Sensitive and Ultra-Broadband VO₂(B) Photodetector Dominated by Bolometric Effect

et al. 2021

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In this study, Wadsley B phase vanadium oxide (VO 2 (B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO 2 (B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of −4.77% K −1 at 40 °C, a peak specific detectivity of 6.02 × 10 9 Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature−photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO 2 (B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.

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Section: Resultsmentioning

confidence: 72%

Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

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Highly Sensitive and Ultra-Broadband VO₂(B) Photodetector Dominated by Bolometric Effect

et al. 2021

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“…Previous studies on

-based bolometers have reported TCR values of −3.5%

[ 32 ], −2.3%

[ 33 ], −1.88 to −2.85%

[ 34 ] and −2.9%

[ 35 ]. The TCR values reported in this work (about −3.9%

) are higher than the reported values and this is most likely associated with the higher resistivity of the

films under study in this work.…”

Section: Resultsmentioning

confidence: 99%

Analyzing the Bolometric Performance of Vanadium Oxide Thin Films Modified by Carbon Nanotube Dispersions

et al. 2023

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The influence of carbon nanotube (CNT) dispersions on the electrical properties and noise signal amplitude of VOx films is investigated. For a critical range of the CNT dispersion density on VOx films, the intrinsic properties of the VOx films are modified by the CNTs. The CNT concentrations reported in this work are about 0.3 μg/cm2 and 1.6 μg/cm2, allowing for low density and high density dispersions on the VOx film surface to be investigated. These values are higher than the percolation threshold of about 0.12 μg/cm2 for these films. The composite film exhibits a significant reduction in the temperature coefficient of resistance (TCR) (from ≈3.8% K−1 to ≈0.3% K−1) for high density dispersions. In contrast, while VOx–CNT composites with low density single wall CNT dispersions exhibit no significant change in TCR values, an approximate two orders of magnitude reduction in the low frequency 1/f noise is measured. The noise signal amplitude measured at 0.1 V and at 1.0 Hz reduces from 6 × 10−5V/(Hz) for VOx films to 5 × 10−7V/(Hz) for the low density SWCNT dispersion on VOx film and to 3 × 10−6V/(Hz) for the low density MWCNT dispersion on VOx film. The CNT concentration is the critical factor for yielding the observed changes in conductivity and low frequency noise. The results presented in this work provide a better understanding of VOx-based composites, thereby enabling the development of new, versatile and functional materials for device applications.

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“…As was already mentioned, such films are widespread and usually used for the fabrication of various pyro-and piezoelectric sensors. Both types of detectors have approximately the same sensitivity to heating on the order of 10 8 cm √ HzW −1 [31,32]. We gave preference to the second option, as it allows the use of an individual sensor for each new sample due to its low cost and ease of fabrication.…”

Section: Introductionmentioning

confidence: 99%

Application of Pyroelectric Sensors Based on PVDF Films for EPR Spectra Detection by Heat Release

Melnikov

Zikirin

Kalneus

et al. 2021

Sensors

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Pyroelectrics are a wide class of materials that change their polarization when the system temperature varies. This effect is utilized for a number of different commercial and industrial applications ranging from simple thermal sensors and laser interferometers to water vapor harvesting. Electron paramagnetic resonance (EPR) spectroscopy is a powerful tool for studying the structure and dynamics of materials with unpaired electrons. Since heating accompanies a resonant change of the orientation of electron spins in an external magnetic field, pyroelectrics can be utilized as versatile detectors for so-called indirect detection of the EPR signal. In this work, we investigated three different types of PVDF (polyvinylidene difluoride) standard pyroelectric films with indium tin oxide, Cu/Ni, and Au coatings to determine their sensitivity for detecting EPR signals. All the films were shown to be able to detect the EPR spectra of about 1 μg of a standard stable free radical by heat release. A comparative study based on the calculation of the noise-equivalent power and specific detectivity from experimental spectra showed that the Au coated PVDF film is the most promising active element for measuring the EPR signal. Using the best achieved sensitivity, estimation is given whether this is sufficient for using a PVDF-based pyrodetector for indirectly detecting EPR spectra by recombination heat release or not.

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Performance improvement of Y-doped VO_x microbolometers with nanomesh antireflection layer

Cited by 13 publications

References 34 publications

Highly Sensitive and Ultra-Broadband VO₂(B) Photodetector Dominated by Bolometric Effect

Highly Sensitive and Ultra-Broadband VO₂(B) Photodetector Dominated by Bolometric Effect

Analyzing the Bolometric Performance of Vanadium Oxide Thin Films Modified by Carbon Nanotube Dispersions

Application of Pyroelectric Sensors Based on PVDF Films for EPR Spectra Detection by Heat Release

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Performance improvement of Y-doped VOx microbolometers with nanomesh antireflection layer

Cited by 13 publications

References 34 publications

Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect

Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect

Analyzing the Bolometric Performance of Vanadium Oxide Thin Films Modified by Carbon Nanotube Dispersions

Application of Pyroelectric Sensors Based on PVDF Films for EPR Spectra Detection by Heat Release

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Product

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Performance improvement of Y-doped VO_x microbolometers with nanomesh antireflection layer

Highly Sensitive and Ultra-Broadband VO₂(B) Photodetector Dominated by Bolometric Effect

Highly Sensitive and Ultra-Broadband VO₂(B) Photodetector Dominated by Bolometric Effect