Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region
Abstract:In this paper, we investigate the characteristics of a drift region engineered lateral double-diffused metal–oxide–semiconductor field-effect transistor (LDMOSFET) based on partially silicon on insulator (PSOI) technology. The structure, which is called DEPSOI (drift region engineered PSOI), has a drift region with two different doping density levels. The structure only needs one additional fabrication mask, compared to the conventional power PSOI device. In the drift region, a new peak is formed in the latera… Show more
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