Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

Pei, Yanli; Mai, Biaoren; Zhang, Xiaoke; Hu, Rong; Li, Ya; Chen, Zimin; Fan, Bingfeng; Liang, Jun; Wang, Gang

doi:10.1016/j.cap.2015.01.024

Cited by 25 publications

(18 citation statements)

References 17 publications

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“…The origin of the self-compliant phenomenon remains elusive, even if some authors tentatively explain it as caused by the formation of a thin oxide layer between the switching layer and the contact. 18,23…”

Section: Results and Discussionmentioning

confidence: 99%

“…17 SiO 2 has been used as a series resistance material to produce a thinner conductive filament. 18 These reports show the excellent resistive memory properties that can be obtained with sputter-deposited IGZO. This justifies the investigation of low-cost fabrication routes such as deposition from solution, because such methods typically lead to more defective materials with poorer electrical properties.…”

Section: Introductionmentioning

confidence: 87%

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Memristors Using Solution-Based IGZO Nanoparticles

et al. 2017

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Solution-based indium–gallium–zinc oxide (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal–insulator–metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low programming voltages of ±1 V, on/off ratios higher than 10, high endurance, and a retention time of up to 10 4 s. The better performing devices were achieved with annealing temperatures of 200 °C and using asymmetric electrode materials of titanium and silver. The physics behind the improved switching properties of the devices is discussed in terms of the oxygen deficiency of IGZO. Temperature analysis of the conductance states revealed a nonmetallic filamentary conduction. The presented devices are potential candidates for the integration of memory functionality into low-cost System-on-Panel technology.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 87%

Memristors Using Solution-Based IGZO Nanoparticles

et al. 2017

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“…It is widely accepted that programable metallization on the nanoscale within the switching medium causes bistable properties. To better control the localization and the diameter of conducting filaments (CFs) and improve the resistive switching uniformity and stability, bilayer devices (based on chalcogenides or oxides) consisting of a switching layer and a buffer layer were proposed some years ago [ 2 , 3 ]. Note that oxide bilayers are well compatible with complementary metal-oxide-semiconductor (CMOS) technology.…”

Section: Introductionmentioning

confidence: 99%

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

et al. 2019

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Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.

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“…According to the way the current increases, memristors can be roughly classified as digital or analog. The characteristic feature of a digital memristor is that resistive switching is abrupt, and it has been widely studied for its simple structure, easy three-dimensional stacking, and fast resistive switching speed [ 13 , 14 , 15 , 16 , 17 , 18 ]. For the last few years, analog memristors are typically characterized by gradual resistive switching, which has attracted more and more attention due to the application value of brain-like morphology calculations [ 19 , 20 ], programmable analog circuits [ 21 ], and the like.…”

Section: Introductionmentioning

confidence: 99%

Analog and Digital Bipolar Resistive Switching in Co–Al-Layered Double Hydroxide Memristor

Sun

Shi

2020

Nanomaterials

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We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications.

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Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

Cited by 25 publications

References 17 publications

Memristors Using Solution-Based IGZO Nanoparticles

Memristors Using Solution-Based IGZO Nanoparticles

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

Analog and Digital Bipolar Resistive Switching in Co–Al-Layered Double Hydroxide Memristor

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