Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMT

Hsu, Wei‐Chou; Huang, Dong-Hai; Lin, Yu-Hsiang; Chen, Yi-Jane; Huang, Jen-Fa; Wu, Chang-Luen

doi:10.1109/ted.2005.863545

Cited by 26 publications

(9 citation statements)

References 26 publications

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“…First, the interest was driven by their tunable properties for light-emitting diodes (LEDs) and other optoelectronic applications [1] and by their wide bandgap (WBG) semiconductor properties for high electron mobility transistors (HEMTs) in radio frequency (RF) and power electronic applications. [2] Scandium additions to AlN were first reported to produce significant increases in piezoelectric response in 2009 [3] and were very quickly adopted for the piezoelectric thin film devices such as film bulk acoustic resonators (FBARs) in cell phones. [4] Recent reports on ferroelectricity in Al 1-x Sc x N for x ≥ 0.1 have sparked additional scientific interest as the first wurtzite ferroelectric material [5,6] and significant technological interest as a candidate for hybrid logic-in-memory devices.…”

Section: Introductionmentioning

confidence: 99%

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al_0.6Sc_0.4N Films Using In Situ Optical Emission Spectrometry

Drury

Yazawa

Mis

et al. 2021

Physica Rapid Research Ltrs

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High‐Sc Al1–xScxN thin films are of tremendous interest because of their attractive piezoelectric and ferroelectric properties, but overall film quality and reproducibility are widely reported to suffer as x increases. In this study, structural and electrical properties of metastable Al0.6Sc0.4N films are connected with plasma changes during film growth, identified via glow discharge optical emission spectroscopy (GD‐OES), and linked to the target mode changes. This in situ GD‐OES technique uses changes in the N2(I) intensity, correlated with DC bias hysteresis behavior of a Al0.6Sc0.4 target in metallic and poisoned modes, to identify films that subsequently exhibit unacceptable structural and electrical performance. Two representative samples deposited under identical conditions but possessing distinct properties related to phases present in the films are focused on. Films sputtered under a poisoned target mode produce pure wurtzite ferroelectric Al0.6Sc0.4N with a reversible 80 μC cm−1 polarization and 3.1 MV cm−1 coercive field. When identical chamber settings are used but the process starts in metallic mode, a mixed wurtzite/rocksalt film is deposited which exhibits nanometer‐scale changes to the film microstructure and a nonferroelectric response. These results illustrate the utility of optical emission spectroscopy for tracking target mode fluctuations when fabricating metastable materials such as high‐Sc Al1–xScxN films.

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Section: Introductionmentioning

confidence: 99%

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al_0.6Sc_0.4N Films Using In Situ Optical Emission Spectrometry

Drury

Yazawa

Mis

et al. 2021

Physica Rapid Research Ltrs

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“…In addition, as compared with previous work, device A exhibits an excellent power performance. This indicates that the higher current density of the double δ-doped structure (device A) could improve the related power performance …”

Section: Resultsmentioning

confidence: 94%

“…This indicates that the higher current density of the double δ-doped structure (device A) could improve the related power performance. 17…”

Section: ' Results and Discussionmentioning

confidence: 99%

Performance of Metamorphic Transistors with δ-Doped Structures

et al. 2011

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The interesting dc, microwave, and power performance of double and single δ-doped metamorphic high electron mobility transistors (MHEMTs), grown by molecular beam epitaxy, are studied. Because of the use of a double δ-doped structure, the increase of carrier density and uniform distribution of carriers within the channel are found. Therefore, the superior characteristics in the drain saturation current of 544.4 (523.9) mA/mm, extrinsic transconductance of 361.2 (312.4) mS/mm, drain current operation region of 236.9 (227.4) mA/mm, unity current gain cutoff frequency of 55.1 GHz, maximum oscillation frequency of 129.17 GHz, output power of 15.35 dBm, power gain of 24.65 dB, and power added efficiency of 39.4% could be achieved for a 0.6 × 100 μm2 gate dimension MHEMT at 300 (510) K. With increasing the temperature from 300 to 510 K, the slight temperature variation rates are also found for the studied device with a double δ-doped structure. On the other hand, the kink effect and impact ionization for the studied device with a double δ-doped structure are considerably suppressed.

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“…3,6 Among them, heterostructure field-effect transistors ͑HFETs͒ have been widely used in highspeed, high-frequency, microwave, and optoelectronic applications. [7][8][9][10][11] Based on the combination of HFETs and catalytic metals, the potential for microsensors and microelectromechanical system applications is appreciably promising.…”

mentioning

confidence: 99%

Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor

Hung

Chen

Tsai

et al. 2008

J. Electrochem. Soc.

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On the basis of a GaAs-based heterostructure field-effect transistor with a catalytic Pd gate film, an interesting hydrogen sensor was fabricated and studied. A study of the hydrogen-induced dipole effect on device performance, including output resistance ͑r o ͒, Early voltage ͑V A ͒, and the drain saturation current ͑I DS ͒ operating regime, is reported. A significant change in the relative sensitivity ratio ͓S r ͑%͔͒ was observed in the cutoff region. In addition, a linear dependence between the logarithmic values of response time and hydrogen concentration is consistent with theoretical analysis. Experimentally, a high S r ͑%͒ of 348% in 9970 ppm H 2 /air was obtained in the cutoff region at 50°C. The width of the I DS operating regime decreased from 115.3 to 108.2 mA/mm with an increase of the hydrogen concentration from air to 9970 ppm H 2 /air. From the experimental results, it is speculated that the polarization of a dipole layer reduces the depletion region, which results in a substantial change in the two-dimensional electron gas ͑2DEG͒ and the effective channel length and shape.

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Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMT

Cited by 26 publications

References 26 publications

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al_0.6Sc_0.4N Films Using In Situ Optical Emission Spectrometry

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al_0.6Sc_0.4N Films Using In Situ Optical Emission Spectrometry

Performance of Metamorphic Transistors with δ-Doped Structures

Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor

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Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMT

Cited by 26 publications

References 26 publications

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al0.6Sc0.4N Films Using In Situ Optical Emission Spectrometry

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al0.6Sc0.4N Films Using In Situ Optical Emission Spectrometry

Performance of Metamorphic Transistors with δ-Doped Structures

Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor

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Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al_0.6Sc_0.4N Films Using In Situ Optical Emission Spectrometry

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al_0.6Sc_0.4N Films Using In Situ Optical Emission Spectrometry