Performance Improvement in SC-MLGNRs Interconnects Using Interlayer Dielectric Insertion

Nishad, Atul Kumar; Sharma, Rohit

doi:10.1109/tetc.2015.2486748

Cited by 25 publications

(33 citation statements)

References 48 publications

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“…The W, S, T gnr , T ox , and ε r are line width, line space, line height, thickness of insulator dielectric, and relative dielectric constant of the ultra-low-k dielectric material, respectively. The total number of layers for MLGNR depends on the line thickness T gnr and can be expressed as N layer = 1 + Integer[T gnr /δ] [23]. Herein the operator Integer [.…”

Section: Interconnect Modelmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

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Section: Interconnect Modelmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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“…Although SC-MLGNR has a host of excellent electrical performance, there are still some limitation to be solved in the practical application on-chip interconnects. The SC-MLGNR is easy to be converted into graphite due to the interlayer electron hopping, which results in reducing its electron MFP and thereby increasing the distributed scattering resistance [16]. The reason for the interlayer electron hopping phenomenon is that the carbon-carbon bond lengths are modulated by the elastic strain of the stacked multiple layers [16], [17].…”

mentioning

confidence: 99%

“…The SC-MLGNR is easy to be converted into graphite due to the interlayer electron hopping, which results in reducing its electron MFP and thereby increasing the distributed scattering resistance [16]. The reason for the interlayer electron hopping phenomenon is that the carbon-carbon bond lengths are modulated by the elastic strain of the stacked multiple layers [16], [17]. As a consequence, it is crucial to seek an alternative structure for enhancing the MFP of SC-MLGNR.…”

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confidence: 99%

“…As a consequence, it is crucial to seek an alternative structure for enhancing the MFP of SC-MLGNR. Over the past few years, it is reported that the carrier mobility of GNR layers can be improved by inserting the high-k dielectric layer between two adjacent GNR layers, hence its MFP could be improved [16], [18]. This can restrict SC-MLGNR to turn into the graphite and improve the total number of graphene layers of SC-MLGNR interconnects.…”

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confidence: 99%

“…This can restrict SC-MLGNR to turn into the graphite and improve the total number of graphene layers of SC-MLGNR interconnects. In [16], the number of graphene layers can reach 60 by inserting the HfO 2 dielectric between adjacent GNR layers at 22 nm technology node. Moreover, inserting the high-k dielectric layer in SC-MLGNR can also decrease the electron scattering rate of GNR and thus reduce the overall resistance of SC-MLGNR interconnects [19].…”

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confidence: 99%

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Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

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Delay and Frequency Investigations in Coupled MLGNR Interconnects

Joshi

Teja

Singh

et al. 2017

Communications in Computer and Information Science

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Performance Improvement in SC-MLGNRs Interconnects Using Interlayer Dielectric Insertion

Cited by 25 publications

References 48 publications

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Delay and Frequency Investigations in Coupled MLGNR Interconnects

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