Performance Improvement in Nanoscale Ge–GaAs Heterojunction Junctionless Tunnel FET Using a Dual Material Gate

Ghosh, Bahniman; Basak, Shibir; Asthana, Pranav Kumar

doi:10.1166/jolpe.2014.1348

Journal of Low Power Electronics

2014

DOI: 10.1166/jolpe.2014.1348

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Performance Improvement in Nanoscale Ge–GaAs Heterojunction Junctionless Tunnel FET Using a Dual Material Gate

Bahniman Ghosh¹,

Shibir Basak²,

Pranav Kumar Asthana³

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2016

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“…19. In recent years good performing Ge planar devices, [20][21][22] FinFETs, [23][24][25] Gate-All-Around 26 and TFETs [27][28][29] have been demonstrated by different groups (see e.g. Ref.…”

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confidence: 99%

Review—Device Assessment of Electrically Active Defects in High-Mobility Materials

Claeys

Simoen

Eneman

et al. 2016

ECS J. Solid State Sci. Technol.

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The stringent device performance specifications of advanced scaled down technologies necessitates the implementation of high mobility substrates such as SiGe, Strained Si (sSi), Ge, sGe and/or III-V materials like GaAs, InGaAs. The control of the stress-induced defects remains a key challenge. Simple device structures such as capacitors, diodes and transistors are used to assess the electrical activity of extended defects (dislocations; antiphase boundaries; …) in high-mobility channel materials. Beside junction current analyses and lifetime studies, also the use of low-frequency noise characterization is reported. Special case studies are discussed to illustrate the used methodology. The potential of TCAD studies to better understand the electrical defect activity is also briefly addressed.

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mentioning

confidence: 99%

Review—Device Assessment of Electrically Active Defects in High-Mobility Materials

Claeys

Simoen

Eneman

et al. 2016

ECS J. Solid State Sci. Technol.

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show abstract

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Performance Improvement in Nanoscale Ge–GaAs Heterojunction Junctionless Tunnel FET Using a Dual Material Gate

Cited by 1 publication

References 0 publications

Review—Device Assessment of Electrically Active Defects in High-Mobility Materials

Review—Device Assessment of Electrically Active Defects in High-Mobility Materials

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