Performance evaluation of tunneling field effect transistor on Terahertz detection

Yang, Qunsi; Zhang, J.; Zhu, Chong; Lin, Xian; Yan, Feng; Ji, Xiaoli

doi:10.1109/cstic.2018.8369195

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…TFETs find their applications in low-voltage electrical and optical switching 25 , accelerometry 26 , chemical 27 and biological sensing 28,29 . In spite of this variety, the use of TFETs for the rectification of highfrequency signals 30 has not been attempted so far. This is also surprising considering recent advances in the development of tunnelling high-frequency rectifiers and detectors based on quantum dots 31,32 , diodes [33][34][35][36][37][38] and superconducting tunnel junctions [39][40][41] .…”

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confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko

Alymov

et al. 2021

Nat Commun

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The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/$$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.

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confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko

Alymov

et al. 2021

Nat Commun

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show abstract

“…TFETs find their applications in lowvoltage electrical and optical switching [24], accelerometry [25], chemical [26] and biological sensing [27,28]. In spite of this variety, the use of TFETs for the rectification of high-frequency signals [29] has not been attempted so far. This is also surprising considering recent advances in the development of tunnelling high-frequency rectifiers and detectors based on quantum dots [30,31], diodes [32][33][34][35][36][37] and superconducting tunnel junctions [38][39][40].…”

mentioning

confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko,

Xu,

Alymov

et al. 2020

Preprint

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Performance evaluation of tunneling field effect transistor on Terahertz detection

Cited by 2 publications

References 3 publications

Tunnel field-effect transistors for sensitive terahertz detection

Tunnel field-effect transistors for sensitive terahertz detection

Tunnel field-effect transistors for sensitive terahertz detection

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