Performance Evaluation of SiC MOSFET/BJT/Schottky Diode in A 1MHz Single Phase PFC

Xu, Xiaojun; Huang, Alex Q.; Gao, Yan; Agarwal, Anant; Krishnaswami, Sumi; Ryu, Sei‐Hyung; Huang, Xu

doi:10.1109/apex.2007.357678

Cited by 9 publications

(3 citation statements)

References 8 publications

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“…Because the higher doping and current densities of SiC material, the SiC MOSFETs have smaller area and capacitance, therefore they are more efficient than Si MOSFETs. The fall time of SiC MOSFET current is smaller, hence switching losses and on state resistance of it is lower than Si MOSFET [12].…”

Section: B Sic Mosfetmentioning

confidence: 99%

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Safari

Castellazzi

Wheeler

2014

IEEE Trans. Power Electron.

115

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Section: B Sic Mosfetmentioning

confidence: 99%

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Safari

Castellazzi

Wheeler

2014

IEEE Trans. Power Electron.

115

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“…The collector-emitter voltage limit of silicon device is 800 volts and therefore the tests has been limited to this. It must be noted that this is one of the highest voltage levels available for a commercial silicon BJT [27]. The SiC device, on the other hand, can sustain voltages as high as 1700 volts with prospect of emergence of higher voltage SiC devices in the foreseeable future.…”

Section: Experimental Set-upmentioning

confidence: 99%

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

Jahdi

Hedayati

Stark

et al. 2020

IEEE Trans. Ind. Electron.

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This paper reports the application of silicon BJT modelling techniques to the modelling of dynamic behaviour of high-voltage 4H-SiC BJTs, and the experimental validation thereof. High voltage silicon BJTs are impractical due to their low current gain which requires a bulky base driver. Emergence of high voltage 4H-SiC vertical NPN BJTs with a tenfold higher gain enables the application of efficient drivers, with ratings close to those of IGBTs. This paper demonstrates the advantages offered by 4H-SiC BJTs by means of wide-scale measurements at 800 V and 10 A in a range of temperatures up to 175 • C and adjusted base driver switching rates. The paper shows that the turn-off storage delay in the SiC BJT is two orders of magnitude lower than that of the silicon device. It also shows that the turn-on switching transients of SiC device are by an order of magnitude and the turn-off transients are by two orders of magnitude faster than that of its silicon counterpart, resulting in a tenfold reduction of the switching energy. It also demonstrates the temperaturedependency of switching transients of the silicon BJT, and the relative temperature-invariance of the SiC device's performance. The paper concludes with validation of the transient models for the 4H-SiC NPN BJT, showing that the model is sufficiently accurate for transient switching and loss calculations.

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“…4H-SiC JBS diodes have been less studied for high current power applications. Large area, high current 1.2 kV class 4H-SiC JBS devices have tremendous potential for applications in power factor correction (PFC), switched mode power supplies, and AC motor-drives [11][12][13]. In this paper, we demonstrate large area (up to 30 mm 2 ) 4H-SiC JBS diodes capable of 330 A doi: 10.1007/s11431-015-5882-4 forward conduction at a forward voltage (V F ) of 5.0 V at room temperature and a breakdown voltage of 1.6 kV.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

Song

Yuan

Han

et al. 2015

Sci. China Technol. Sci.

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There is a great interest in monolithic 4H-SiC Junction Barrier Schottky (JBS) diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 µm 4H-SiC epitaxial layer doped to 6×10 15 cm 3 . JBS diodes with an active area of 30 mm 2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm 2 . A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 A through the use of an optimum multiple floating guard rings (MFGR) termination, which is about 87.2% of the theoretical value. The differential specific-on resistance (R SP-ON ) was measured to be 3.3 m cm 2 , leading to a FOM (VB 2 /R SP-ON ) value of 0.78 GW/cm 2 , which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices. 4H-SiC, JBS, current capability, breakdown voltageCitation: Song Q W, Yuan H, Han C, et al. Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current. Sci China Tech Sci,

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Performance Evaluation of SiC MOSFET/BJT/Schottky Diode in A 1MHz Single Phase PFC

Cited by 9 publications

References 8 publications

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

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