Performance Evaluation of a Temperature Control Stage Used on a Semiconductor Gas Sensor 3D Electro-Thermal Model Through Simulink(r)

Vazquez-Acosta, E. N.; Mendoza-Acevedo, S.; Reyes-Barranca, M. A.; Flores-Nava, L.M.; Moreno-Cadenas, J.A.; González-Vidal, José Luis

doi:10.5772/37675

Cited by 1 publication

(2 citation statements)

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“…Once in contact, a charge is produced as a result of the chemical reaction that occurs when a gas is detected by the thin layer. We can interpret this reaction as a variation of oxidizing or reducing agents [3,12]. It is important to differentiate the mechanism that creates this charge, as there are two very well-known methods for programming a FGMOS: hot electron injection (HEI) and Fowler-Nordheim tunneling (FN).…”

Section: Floating-gate Mos Transistor (Fgmos)mentioning

confidence: 99%

“…Gas sensors based on semiconductor oxides are very useful nowadays; Their sensing properties allow establishing the presence of either oxidizing or reducing species. Working principles of gas sensors based on thin films have been widely reported in several papers and books [1][2][3][4][5]. Charge releasing is due to the reducing process in the presence of a reducing agent, and this can be quantified by a very complex system.…”

Section: Introductionmentioning

confidence: 99%

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Sensing system with an artificial neural network based on floating-gate metal oxide semiconductor transistors

et al. 2019

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This paper shows a novel design of a gas sensor system based on artificial neural networks and Floating-gate MOS Transistors (FGMOS). Two types of circuits with FGMOS transistors of minimum dimensions were designed and simulated by Simulink of Matlab; simulations and experimental measurements results were compared obtaining good expectations. The reason of using FGMOS is that ANN can also be implemented with these kinds of devices, since ANN’s based on FGMOS are able to produce pseudo Gaussian-functions. These functions give a reliable option to determine the gas concentration. A sensitive thin film can be deposited on the FGMOS’s floating gate, which produces a charge variation due to the chemical reaction between the sensitive layer and the gas species, modifying the threshold voltage thereby a correlation of drain current of the FGMOS with gas concentration can be obtained. Therefore, a generator circuit was implemented for the pseudo Gaussian signal with FGMOS. This system can be applied in environments with dangerous species such as CO2, CO, methane, propane, among others. Simulations demonstrated that the implemented proposal has a good performance as an alternative method for sensing gas concentrations, compared with conventional sensors.

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Section: Floating-gate Mos Transistor (Fgmos)mentioning

confidence: 99%