Performance evaluation of a 32-nm CNT-OPAMP: Design, characteristic optimization and comparison with CMOS technology

Rahman, Fahim; Zaidi, A. M. A.; Anam, Nadia; Akter, Aysha

doi:10.1109/iccitechn.2011.6164856

Cited by 8 publications

(4 citation statements)

References 17 publications

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“…Current carbon nanotubes are the only known scenario in which the size of exploratory devices will be reduced to incredibly small sizes. It is possible that the results will complement the expectations, enabling, theoretically, for the experimental validation of analytical models and device architecture [3].…”

Section: Introductionmentioning

confidence: 65%

Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Kumar

Janakirani

Anand

et al. 2022

Journal of Nanomaterials

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Difference differential amplifiers (DDA), which were built on FinFET and carbon nanotube FET (CNTFET), are frequently used for signal processing owing to their advantages of low-power dissipation and reduced device dimension. In this work, high-performance DDA was established using CNTFET model parameters as well as FinFET 7 nm and 14 nm technology. The DDA circuit used in this scenario was identically the same to the one used previously. With the use of Verilog AMS code-based Stanford model parameters applied CNTFET and 7 nm and 14 nm FinFETs, schematic capture and simulations of the DDA were carried out in the Symica environment. The mostly used measurements for assessing the performance of operational amplifiers were also adopted for DDA. The CNTFET-based difference differential amplifiers have slew rates of 10.8 V/femtosecond and 11.2 mV/femtosecond, respectively, with settling times of 0.65 femtosecond and 0.43 femtosecond, respectively. The power supply rejection ratio (PSRR) is 2.53 dB with a dynamic range of 198 mV and 6 mV for CNTFET DDA operating at 0.6 V DC. The incentives of CNTFET appropriateness for DDA designed in this study for any analogue front end were further demonstrated by using CNTFET for DDA with the achievement of open loop differential gain of 116.03 dB with BW of 4 GHz and phase margin of 270 and common mode gain of -28.65 dB with BW of 55.14 MHz and phase margin of 270.

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Section: Introductionmentioning

confidence: 65%

Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Kumar

Janakirani

Anand

et al. 2022

Journal of Nanomaterials

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“…device. Therefore, CNTFET based device offer better analog and digital circuits [19][20][21][22][23][24][25] performance because of the lower threshold voltage and excellent electrical properties.…”

Section: Fig 1 Block Diagram Of Energy Harvesting System Carbon Nanmentioning

confidence: 99%

High Efficiency RF Energy Harvesting CNTFET Rectifier for Bio-implants Applications

Khan*,

Hasan

2019

IJEAT

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Carbon nanotube field effect transistor (CNTFET) based full wave rectifier given in the paper, works efficiently in the range of radio frequency. The CNTFET offers extremely less power loss and high through-put because of its high conducting properties. The Complementary Metal Oxide Semiconductor (CMOS) based studies are available but CNTFET based studies are rarely available. Therefore, CNTFET based rectifier has been used for the replacement of CMOS based rectifier architecture. The full wave rectifier circuit was analyzed using 32nm CNTFET Stanford model. An additional circuit of clampers is also used for introducing a negative DC level. Introduced negative DC signal further negated RF input signal and combined signal used for biasing the p type device during its conduction cycle. The CNTFET based rectifier with clamper circuit decreases the effective threshold voltage of switching p CNTFETs. The circuit resulted better RF input sensitivity of the transistor. Results show that 77.7% power conversion efficiency is suitable for powering up the bio-implantable devices.

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“…In CNFET-based implementation, number of tubes, pitch, and diameter are the parameters that are designed to achieve optimum result unlike aspect ratios in case of CMOS [2,3,[28][29][30]. In this analysis, unlike conventional op-amp, it is presumed that the current from Q1 directly flows through the drain of Q6 and thus to the load capacitance and the current from Q2 goes indirectly through Q5 and the current mirror consisting of Q7 to Q10.…”

Section: Design Of Folded Cascode Op-amp Using Carbon Nanotube Field mentioning

confidence: 99%

“…But, the aggressive scaling of MOS transistors now approached to the fact that the channel and gate oxide becomes very thin and diffusion regions of transistors are in such vicinity that the charge carriers can easily cross the channel in vertical direction leading to unwanted currents through it and hence further horizontal scaling is not possible. As anticipated by the International Technology Roadmap for Semiconductors [1], rigorous exploration is desirable in order to endure this process and, undeniably, to encourage novel devices and methods that will move the technology developments in other directions [2,3]. Carbon nanotube field-effect transistor (CNFET) is the competitor transistor which will permit for both the scaling process to sustain and for the progress of novel devices [4].…”

Section: Introductionmentioning

confidence: 99%

Design of Analog Signal Processing Applications Using Carbon Nanotube Field Effect Transistor-Based Low-Power Folded Cascode Operational Amplifier

Bendre

Kureshi²,

Waykole

2018

Journal of Nanotechnology

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Carbon nanotube (CNT) is one of the embryonic technologies within recent inventions towards miniaturization of semiconductor devices and is gaining much attention due to very high throughput and very extensive series of applications in various analog/mixed signal applications of today’s high-speed era. The carbon nanotube field effect transistors (CNFETs) have been reconnoitred as the stimulating aspirant for the future generations of integrated circuit (IC) devices. CNFETs are being widely deliberated as probable replacement to silicon MOSFETs also. In this paper, different analog signal processing applications such as inverting amplifier, noninverting amplifier, summer, subtractor, differentiator, integrator, half-wave and full-wave rectifiers, clipper, clamper, inverting and noninverting comparators, peak detector, and zero crossing detector are implemented using low-power folded cascode operational amplifier (op-amp) implemented using CNFET. The proposed CNFET-based analog signal processing applications are instigated at 32 nm technology node. Simulation results show that the proposed applications are properly implemented using novel folded cascode operational amplifier (FCOA) implemented using CNFET.

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Performance evaluation of a 32-nm CNT-OPAMP: Design, characteristic optimization and comparison with CMOS technology

Cited by 8 publications

References 17 publications

Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

High Efficiency RF Energy Harvesting CNTFET Rectifier for Bio-implants Applications

Design of Analog Signal Processing Applications Using Carbon Nanotube Field Effect Transistor-Based Low-Power Folded Cascode Operational Amplifier

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