Performance estimation of Si/SiGe hetero-CMOS circuits

Hagelauer, R.; Ostermann, Timm; Glück, Michael; Hock, G.

doi:10.1049/el:19970166

Cited by 25 publications

(8 citation statements)

References 5 publications

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“…In particular, the f max values which have been achieved are significantly higher than those in n-or p-MOSFETs for the same gate length. Also plotted is a theoretical calculation of the maximum f T assuming a mobility of 2700 cm 2 V −1 s −1 in the devices [94]. Below 100 nm gate lengths the f T values are to date much lower than that predicted as reduction of parasitic capacitances and resistances are required to optimize the speed of these devices.…”

Section: Si/sige Modulation-doped Field Effect Transistorsmentioning

confidence: 99%

Si/SiGe heterostructures: from material and physics to devices and circuits

Paul¹

2004

Semicond. Sci. Technol.

522

333

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Silicon germanium (SiGe) has moved from being a research material to accounting for a small but significant percentage of manufactured semiconductor devices. This percentage is predicted to increase substantially as SiGe begins to be used in complementary metal oxide semiconductor (CMOS) technology in the future to substantially improve performance. It is the development of Si/SiGe heterostructures which has enabled band structure and strain engineering allowing Si/SiGe to be used in many different ways to improve conventional microelectronic device performance along with allowing new concepts to be explored. This paper presents a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system. In particular, the important device technologies in mainstream microelectronics of the SiGe heterostructure bipolar transistor (HBT) and strained-Si CMOS will be reviewed before future device and optoelectronics concepts are explored.

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Section: Si/sige Modulation-doped Field Effect Transistorsmentioning

confidence: 99%

Si/SiGe heterostructures: from material and physics to devices and circuits

Paul¹

2004

Semicond. Sci. Technol.

522

333

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“…Si/SiGe heterostructure technology may also be combined with Si CMOS technology [24], [45]. Most of the Si/SiGe hetero FET's are of the modulation-doped type.…”

Section: Si/sige Hetero Fet'smentioning

confidence: 99%

“…Performance extrapolation of n-and p-channel devices point to transconductances above 1000 mS/mm and cutoff frequencies around 200 GHz [45]. …”

Section: Si/sige Hetero Fet'smentioning

confidence: 99%

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Si and SiGe millimeter-wave integrated circuits

Russer

1998

IEEE Trans. Microwave Theory Techn.

114

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Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon-and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon-and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.Index Terms-Millimeter-wave IC, silicon-based RF circuits.

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“…R ECENT advances in SiGe strained-layer modulation-doped field-effect transistor (MODFET) technology indicate that these devices may hold promise for a wide variety of future microelectronic applications, including wireless and wired communications [1], [2], as well as future advanced logic technology [3], [4]. For communications applications in particular, losses and isolation problems due to the conducting Si substrate represent a serious disadvantage compared to III-V devices that utilize semi-insulating substrates, and these problems worsen with increased frequency.…”

mentioning

confidence: 99%

SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/

Koester

Hammond²,

Chu

et al. 2001

IEEE Electron Device Lett.

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The dc and microwave results of Si 0 2 Ge 0 8 /Si 0 7 Ge 0 3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with = 0 1 m displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0 1 50 m 2 devices yielded unity current gain ( ) and unilateral power gain ( max ) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0 1 90 m 2 devices revealed minimum noise figure ( min ) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz. Index Terms-Germanium alloys, heterojunctions, MODFETs, semiconductor device noise, semiconductor epitaxial layers, silicon alloys, silicon-on-insulator technology. R ECENT advances in SiGe strained-layer modulation-doped field-effect transistor (MODFET) technology indicate that these devices may hold promise for a wide variety of future microelectronic applications, including wireless and wired communications [1], [2], as well as future advanced logic technology [3], [4]. For communications applications in particular, losses and isolation problems due to the conducting Si substrate represent a serious disadvantage compared to III-V devices that utilize semi-insulating substrates, and these problems worsen with increased frequency. The use of insulating substrates such as sapphire is a potential solution to this problem, and previous results on Si [5] and pseudomorphic SiGe-channel MOSFETs [6] fabricated on silicon-on-sapphire (SOS) wafers have produced encouraging results. However, SiGe MODFETs require relaxed SiGe buffer layers, and the growth of high-quality relaxed SiGe on sapphire or SOS substrates has not previously been demonstrated. In this paper, we present the fabrication and characterization of 0.1 m gate-length pMODFETs fabricated on high-mobility Si Ge /Si Ge quantum wells grown on SOS wafers. We show that high-mobility heterostructures can be grown on these Manuscript

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Performance estimation of Si/SiGe hetero-CMOS circuits

Cited by 25 publications

References 5 publications

Si/SiGe heterostructures: from material and physics to devices and circuits

Si/SiGe heterostructures: from material and physics to devices and circuits

Si and SiGe millimeter-wave integrated circuits

SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/

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