2020
DOI: 10.3390/nano10020184
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Performance Enhancement of Ultra-Thin Nanowire Array Solar Cells by Bottom Reflectivity Engineering

Abstract: A bottom-reflectivity-enhanced ultra-thin nanowire array solar cell is proposed and studied by 3D optoelectronic simulations. By inserting a small-index MgF2 layer between the polymer and substrate, the absorption is significantly improved over a broad wavelength range due to the strong reabsorption of light reflected at the polymer/MgF2 interface. With a 5 nm-thick MgF2 layer, the GaAs nanowire array solar cell with a height of 0.4–1 μm yields a remarkable conversion efficiency ranging from 14% to 15.6%, sign… Show more

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Cited by 9 publications
(5 citation statements)
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References 43 publications
(48 reference statements)
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“…For the bottom part near the MgF2 substrate, the re-absorption is weak as the reflected light from the SiO2/MgF2 interface is difficult to reach the NW bottom. In future studies, the material and shape of the substrate and encapsulant need to be optimized to enhance the reabsorption by the NW bottom [30]. Figure 7 shows the current-voltage characteristics of the AE-HNA, HNA, and thin-film structures.…”
Section: Resultsmentioning
confidence: 99%
“…For the bottom part near the MgF2 substrate, the re-absorption is weak as the reflected light from the SiO2/MgF2 interface is difficult to reach the NW bottom. In future studies, the material and shape of the substrate and encapsulant need to be optimized to enhance the reabsorption by the NW bottom [30]. Figure 7 shows the current-voltage characteristics of the AE-HNA, HNA, and thin-film structures.…”
Section: Resultsmentioning
confidence: 99%
“…Not only geometry but also the orientation of SiNWs either as inclined (tilted, slanted) or vertically aligned plays a role for improved light trapping and therefore strong optical absorption is observed for inclined SiNW array [135][136][137][138][139]. Hong et al performed comprehensive simulation and modeling and discovered that the uppermost optical absorption efficiency of slanted SiNW (P = 800 nm and D/P = 0.7) is 33.45%, compared to vertically aligned SiNW (which is close to 28.36%) [140].…”
Section: Substrate Reflection R(θ λ)mentioning
confidence: 99%
“…Nevertheless, compared with homojunction devices, hybrid heterojunction devices are still greatly limited for commercialization due to low efficiencies and stability. Different optimization pathways have been reported including 1) morphology regulation of nanostructured inorganic semiconductor layers; [26][27][28] 2) introduction of back-surface field (BSF) layers or/and front-surface field (FSF) layers; [23,29,30] 3) introduction of antireflective coatings (ARCs); [31][32][33] 4) conductivity enhancement of carrier transport layers; [34][35][36] 5) surface/interface passivation, [37,38] etc. To date, an efficiency of 13% is attained for GaAs/polymer SCs, [29] which is still far from the highest efficiency (over 20%) of Si HSCs.…”
Section: Introductionmentioning
confidence: 99%