Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics

Abstract

We demonstrated a promising route for enhancing temperature sensitivity, improving saturation voltage, and reducing power consumption of the MOS(p) tunneling temperature sensors by introducing ultrathin Al2O3 into the dielectric stacks. Detailed illustrations of the working mechanism and device concept are given in this work. Three kinds of MOS(p) tunneling temperature sensors with nanoscale SiO2, HfO2, and Al2O3 dielectrics were compared comprehensively. For Al2O3 MOS(p) devices with an equivalent oxide thickness of 2 nm, the sensing performance was effectively improved and the temperature-sensitive current-voltage characteristics are reliable and reproducible. The low-temperature processing Al2O3 MOS(p) tunneling temperature sensors are potential candidates for temperature monitoring sensors on chips or biomedical systems under low thermal budget processing consideration.

Selective control of electron and hole tunneling in 2D assembly

“…The current component, owing to the disorder-assisted generation-recombination (G-R) effect in the depletion region (with width W D ) governed by Shockley-Read-Hall statistics, is expected to be temperature-sensitive ( 14 ) because it is proportional to en i ( T ) W D /τ, where τ is the carrier lifetime and n i ( T ) is the intrinsic carrier density (see the Supplementary Materials). The measured E A of the MIS-C is 100 times smaller than the half bandgap of WS 2 ; thus, the insignificant generation of G-R current is suggestive ( 17 ). We attribute the nonzero E A to the bandgap reduction with temperature because of the intensified electron-phonon interaction at high temperatures that may alter the height of the barrier.…”

Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal–oxide–semiconductor capacitor

“…5 elucidates the different leakage current transportation mechanism before and after the stress. 7,18,19) TE emission was observed to have governed the transportation mechanism before the stress. After the stress, numerous traps and interface states were generated from oxygen vacancies and thermal instability in the dielectric.…”

Recent research trends in textile-based temperature sensors: a mini review

“…Temperature sensors are classified in various ways depending on principles and materials, such as resistance temperature detectors (RTDs), infrared temperature sensors, and thermocouples. Materials such as metal, metal oxide, and ceramic, which have limited characteristics including inflexibility, heavyweight, and fragility, have been mainly used to make temperature sensors [1][2][3]. Recently, carbon-based materials, like carbon black, graphene, and carbon nanotube, and various flexible substrates, like polydimethylsiloxane (PDMS), textile, and polyimide (PI), have been studied to get better mechanical and electrical properties [4][5][6][7][8][9].…”