Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure

Saroosh, Rabia; Tauqeer, Tauseef; Afzal, Sara; Mehmood, Haris

doi:10.1049/iet-opt.2016.0141

Cited by 9 publications

(8 citation statements)

References 27 publications

(32 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The comparison of luminous and external quantum efficiencies of our simulated SQW SiC LED has been done with the similar structure of GaN MQW LED reported in the literature. Despite the presence of SQW, our device exhibited impressive luminous and external quantum efficiencies compared to that of the MQW LED device reported in the literature [50]. The comparison of the results has been tabulated in Tables 4 and 5.…”

Section: Calculations For Luminous Efficiency and External Quantum Ef...mentioning

confidence: 71%

“…We could not find any similar edge LED structure in the literature MQWs increase current spreading and charge carriers' confinement. Ionization of electrons at high bias voltages increases the possibility of recombination of charge carriers [50]. However, we only introduced a SQW to reduce the complexity in fabrication and cost of the device.…”

Section: Power Spectral Density Of Simulated Sic Ledmentioning

confidence: 99%

“…This efficiency is also quite good for SQW SiC LED. The formulae used for the calculation of luminous efficiency and quantum efficiency have been taken from the literature [50]. Both obtained efficiencies of our proposed LED can be optimized and customized numerically by choosing appropriate physical models and tuning of material parameters.…”

Section: Calculations For Luminous Efficiency and External Quantum Ef...mentioning

confidence: 99%

“…The reason for the high luminous and external quantum efficiencies of the GaN-based LED device reported in the literature is the presence of MQWs. (i.e., device A, B, and C have been taken from the literature [50]).…”

Section: Calculations For Luminous Efficiency and External Quantum Ef...mentioning

confidence: 99%

See 3 more Smart Citations

Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

et al. 2021

Self Cite

View full text Add to dashboard Cite

In the last decade, silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remarkable physical and electrical characteristics, such as better thermal and electrical conductivities, 3C-SiC, 4H-SiC, and 6H-SiC are considered as the most distinguished polytypes of SiC. In this article, physical device simulation of a light-emitting diode (LED) based on the unique structural configuration of 4H-SiC and 6H-SiC layers has been performed which corresponds to a novel material joining technique, called diffusion welding/bonding. The proposed single quantum well (SQW) edge-emitting SiC-based LED has been simulated using a commercially available semiconductor device simulator, SILVACO TCAD. Moreover, by varying different design parameters, the current-voltage characteristics, luminous power, and power spectral density have been calculated. Our proposed LED device exhibited promising results in terms of luminous power efficiency and external quantum efficiency (EQE). The device numerically achieved a luminous efficiency of 25% and EQE of 16.43%, which is at par performance for a SQW LED. The resultant LED structure can be customized by choosing appropriate materials of varying bandgaps to extract the light emission spectrum in the desired wavelength range. It is anticipated that the physical fabrication of our proposed LED by direct bonding of SiC-SiC wafers will pave the way for the future development of efficient and cost-effective SiC-based LEDs.

show abstract

Section: Calculations For Luminous Efficiency and External Quantum Ef...mentioning

confidence: 71%

Section: Power Spectral Density Of Simulated Sic Ledmentioning

confidence: 99%

Section: Calculations For Luminous Efficiency and External Quantum Ef...mentioning

confidence: 99%

Section: Calculations For Luminous Efficiency and External Quantum Ef...mentioning

confidence: 99%

See 2 more Smart Citations

Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…In consideration of the actual situation in the active region, the Shockley-Read-Hall (SRH) lifetime and the Auger recombination coefficient are set to be 10 ns and 1.0 Â 10 À31 cm 6 s À1 , respectively. [32,33] The electron and hole mobility of AlGaN are 250 and 5 cm 2 V À1 s À1 , while those of GaN are 300 and 10 cm 2 V À1 s À1 . [34] The energy band offset ratio ΔEc/ΔEv is 0.7/0.3 for III-nitride material systems.…”

Section: Introductionmentioning

confidence: 99%

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Cao

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

The performance improvements of AlGaN‐based deep ultraviolet light‐emitting diodes (DUV‐LEDs) with multigradient electron blocking layer (EBL) and triangular last quantum barrier (LQB) are investigated. The results show that the maximum internal quantum efficiency (IQE) is improved by 44.9% and light output power (LOP) is improved by 58.1% at 200 A cm−2, exhibiting a tremendous improvement compared to the conventional structure. These improvements are mainly attributed to the fact that both multigradient EBL and triangular LQB can generate negative polarization charges in the graded composition layer, which leads to a significant increase in hole concentration compared to the conventional EBL and LQB structures. Meanwhile, the multigradient EBL can transform the conventional triangular barrier into an arc‐shaped barrier, increasing the electron potential barrier height and decreasing the hole potential barrier height. This unique design suppresses electron leakage and enhances hole injection, leading to a significant enhancement of the IQE and alleviation of the efficiency droop.

show abstract

Enhancing GaN LED Efficiency with Advanced Quantum Well Structure

Aftab,

Chaudhry

2024

Natl. Acad. Sci. Lett.

View full text Add to dashboard Cite

Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure

Cited by 9 publications

References 27 publications

Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Enhancing GaN LED Efficiency with Advanced Quantum Well Structure

Contact Info

Product

Resources

About